Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics

Abstract

A new tensile strained InGaAs/InGaAlAs quantum well structure in the 1.3 µm wavelength region is proposed for high temperature characteristics via quantum well band structure and optical gain calculations. To obtain such features, a tensile-strained InGaAs/InGaAlAs quantum well structure, which emits light dominated by TM polarization, is considered. This proposed structure has very high temperature characteristics (T 0 > 130 K) due to its high density of state at the first transition edge. This results clearly show the potential of tensile strained quantum well structure usage for the high temperature operation of quantum well semiconductor lasers.

High-speed MBE-grown 1550 nm wafer-fused VCSELs

“…In this case, it is necessary to lower the In content to increase the band gap of InGaAs. 8 Mechanically stressed QWs help to increase differential gain and reduce threshold currents, 9 which favors larger small-signal modulation frequencies.…”

1.3 μm optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region

“…However, the use of InAlGaAs QWs for 1300 nm VCSELs may results in non-radiative Shockley-Read-Hall-recombination-rate, since the higher Al-content is required to shift the QW emission to 1300 nm range [9]. Although In x Ga 1−x As-InP QWs can potentially avoid the mentioned problem, the use of In x Ga 1−x As QWs for 1300 nm range emission is almost impossible [10]. A possible solution is associated with the use of an InGaAs/In(Al)GaAs short-period superlattice (SL).…”