The ZnO-FET Biosensor for Cardiac Troponin I

Fathil, M. F. M.; Arshad, M. K. Md; Nuzaihan, M. N. M.; Gopinath, Subash C. B.; Ruslinda, A. Rahim; Hashim, U.

doi:10.1088/1757-899x/318/1/012031

Cited by 7 publications

(3 citation statements)

References 17 publications

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“…Figure 12 shows the sensitivity response characteristics of TSG-GSM-SGCB for streptavidin detection when the concentration of the biomolecule is varied over a large range ranging between 0.0001 and 1000 mg/mL inside the cavity. The biosensor response characteristics has been investigated and plotted in terms of fractional drain current change (ΔI DS / I DS ) where drain current is evaluated at V GS = 1 V and V DS = 0.5 V. The limit of detection (LOD) [60,61] has been evaluated by analytical approach using curve fitting and regression analysis. The quantity on the x-axis (y-axis) denotes the biomolecule concentration (drain current response).…”

Section: Resultsmentioning

confidence: 99%

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.

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Section: Resultsmentioning

confidence: 99%

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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“…Besides silicon, other materials have been explored in the development of FET immunosensors based on NWs, such as indium phosphide (InP) [55] and zinc oxide (ZnO) [129][130][131]. In the III-V semiconductor family, InP NWs exhibit exciting features for the development of FET-based immunosensors.…”

Section: Nanowires-silicon and Beyondmentioning

confidence: 99%

Addressing the Theoretical and Experimental Aspects of Low-Dimensional-Materials-Based FET Immunosensors: A Review

et al. 2021

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Electrochemical immunosensors (EI) have been widely investigated in the last several years. Among them, immunosensors based on low-dimensional materials (LDM) stand out, as they could provide a substantial gain in fabricating point-of-care devices, paving the way for fast, precise, and sensitive diagnosis of numerous severe illnesses. The high surface area available in LDMs makes it possible to immobilize a high density of bioreceptors, improving the sensitivity in biorecognition events between antibodies and antigens. If on the one hand, many works present promising results in using LDMs as a sensing material in EIs, on the other hand, very few of them discuss the fundamental interactions involved at the interfaces. Understanding the fundamental Chemistry and Physics of the interactions between the surface of LDMs and the bioreceptors, and how the operating conditions and biorecognition events affect those interactions, is vital when proposing new devices. Here, we present a review of recent works on EIs, focusing on devices that use LDMs (1D and 2D) as the sensing substrate. To do so, we highlight both experimental and theoretical aspects, bringing to light the fundamental aspects of the main interactions occurring at the interfaces and the operating mechanisms in which the detections are based.

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“…As a result, early accurate diagnosis is important. The cardiac troponin I (cTnI) antigen is one of the best biomarkers 19) for diagnosis of AMI. Enzyme-linked immunosorbent assay (ELISA) has been used to detect cTnI, but the long-time detection has restricted its development.…”

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confidence: 99%

Extended-gate AlGaAs/GaAs HEMT for accurate cardiac troponin I antigen detection in clinical human serum

Guan

et al. 2020

Appl. Phys. Express

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In this study, we developed extended-gate AlGaAs/GaAs HEMT sensors for accurate cTnI detection in serum. During the research, we found that blocking reagents whose molecule sizes are as large as the sizes of the target biomolecules can greatly improve the accuracy of detection. Based on this, the range of linear detection was significantly broadened, from 100 fg ml−1 to 1 ng ml−1. Additionally, 30y extended-gate HEMT sensors help to achieve accurate detection of cTnI in serum. The lowest relative errors of the 30y-structure were about 4%, which are greatly reduced as compared with the errors when using conventional sensors.

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The ZnO-FET Biosensor for Cardiac Troponin I

Cited by 7 publications

References 17 publications

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Addressing the Theoretical and Experimental Aspects of Low-Dimensional-Materials-Based FET Immunosensors: A Review

Extended-gate AlGaAs/GaAs HEMT for accurate cardiac troponin I antigen detection in clinical human serum

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