We study thin films and magnetic tunnel junction nanopillars based on Ta/Co20Fe60B20/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co20Fe60B20/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in spin torque memories.The ferromagnet/oxide (FM/Ox) interfaces play an important role in modern spintronics. Insulating oxide layers sandwiched between two metallic ferromagnets form magnetic tunnel junctions (MTJs) [1][2][3] which find applications in magnetic sensors [4][5][6][7], spin torque oscillators [8][9][10][11], and non-volatile spin torque memory (STT-RAM) [12]. A number of FM/Ox interfaces exhibit large perpendicular magnetic anisotropy (PMA) [13][14][15][16] needed for enhancing thermal stability of . Furthermore, some FM/Ox interfaces exhibit magneto-electric coupling that allows control of the interfacial PMA with an electric field applied perpendicular to the interface. This effect, known as voltagecontrolled magnetic anisotropy (VCMA) [20][21][22][23], can be used for energy-efficient voltage-driven switching of magnetization at low current densities [15,24,25].The interface between Co x Fe y B z (CoFeB) ferromagnet and MgO insulator is one of the most important interfaces in spintronics because the STT-RAM technology is based on CoFeB/MgO/CoFeB MTJs [26]. Comprehensive understanding of structural, magnetic and electronic properties of CoFeB/MgO-based multilayers is at the forefront of applied spintronics research. In this Letter, we report magnetometry and electrical transport studies of (i) CoFeB/MgO/CoFeB nanoscale magnetic tunnel junctions and (ii) CoFeB/MgO based multilayer films. These studies reveal surprising anomalies in the temperature dependence of resistance and magnetization of the CoFeB films interfaced with MgO. Our data suggest that ultrathin magnetic oxide layers are formed at the CoFeB/MgO interfaces prepared under typical deposition and annealing conditions employed in fabrication of CoFeB/MgO/CoFeB MTJs with high tunneling magnetoresistance (TMR) [1,2]. Interestingly, the high TMR observed in these MTJs seems to be largely unaffected by the interfacial oxide formation.We Prior to patterning, the multilayers are annealed for 2 hours at 300• C in a 1 Tesla in-plane magnetic field that sets the exchange bias direction for the SAF bottom layer parallel to the long (easy) axis of the nanopillar.The CoFeB/MgO based multilayer film composition is Si/ SiOx/ Ta(5 nm)/ Co 20 Fe 60 B 20 (d)/ MgO(1.1 nm) /Ta(1 nm)/ Ru(2 nm), where the CoFeB layer thickness d ranges from 0.9 nm to 2.5 nm. In order to minimize the sample-to-sample variations, the films were grown in a single run without changing the deposition parameters. The films w...