The utilization of low‐temperature evaporable CsN₃‐doped NBphen as an alternative and efficient electron‐injection layer in OLED

Abstract

Cesium azide (CsN 3 ) doped 2,9-bis(naphthalen-2-yl)-4,7diphenyl-1,10-phenanthroline (NBphen) has been demonstrated as an efficient electron-injection layer (EIL) in this work. Advantageous for its low evaporation temperature and air stability, CsN 3 is employed as an n-dopant to replace the reactive alkali metals or alkali metal compounds. Organic lightemitting diodes utilizing this composite EIL exhibit highly improved current density-luminance-voltage characteristics compared to the control device with LiF. When C545T-doped Alq 3 is used as an emitting layer, a maximum current efficiency of 10.4 cd A À1 can be reached. Our results indicate that this CsN 3 -doped NBphen composite layer has great potential as an alternative EIL in organic electronic devices.

Highly Efficient Organic Light‐Emitting Diode Using A Low Refractive Index Electron Transport Layer

“…The electron mobility of 3TPYMB is about 1 × 10 −5 cm 2 V −1 s −1 , while T2T and NBPhen have electron mobilities of about 1.2 × 10 −4 and 4.2 × 10 −4 cm 2 V −1 s −1 , respectively . The electron mobilities of both T2T and NBPhen are more than one order of magnitude higher than that of 3TPYMB.…”

The temperature difference compensation effect of BCP-based OLEDs by variable temperature transient electroluminescence

“…As an important parameter that affects the mobility of materials and the carriers interface transition, temperature has an important influence on carriers transport in OLEDs. Some studies reported that the temperature dependence of the electron mobility, luminous efficiency, EL response and carriers dynamic behaviors of OLEDs [16][17][18][19]. Yuan et al [20] and Berleb et al [21] studied the influence of temperature on carriers characteristics in OLEDs, but there are few specific conclusions about the impact of temperature on carriers transport in OLEDs with different structures.…”