The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

Ronkainen, Helena; Drozdy, G.; Franssila, Sami

doi:10.1109/55.75732

Cited by 9 publications

(3 citation statements)

References 6 publications

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“…From left to right: The lower stripe is patterned from Nb-Al/AlOx-Nb trilayer. Sloped sidewall spacers [26] are deposited. The crossing Nb stripe is deposited and patterned.…”

Section: Squid Fabricationmentioning

confidence: 99%

Two-Stage SQUID Amplifier for the Frequency Multiplexed Readout of the X-IFU X-Ray Camera

Kiviranta

Grönberg

Puranen

et al. 2021

IEEE Trans. Appl. Supercond.

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The X-ray Integral Field Unit (X-IFU) is a cryogenic Xray camera intended for the ATHENA space observatory. Its focal plane will contain a kilopixel array of Transition Edge Sensors (TESs), originally intended to be read out by a Frequency Domain Multiplexer involving 40 carrier frequencies in the 1 -5 MHz range per readout channel. We review dimensioning principles and fabrication of a SQUID tandem, operating at 50 mK and 2 K temperatures, intended to amplify the multiplexed signal from the TES array. The first measurements indicate a 40 ℏ coupled energy resolution in the relevant frequency band, and sufficient linearity to reach the required 1% total harmonic distortion. Additionally, we describe the non-multiplexed amplifier SQUID for the X-IFU anti-coincidence detector.

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“…From left to right: The lower stripe is patterned from Nb-Al/AlOx-Nb trilayer. Sloped sidewall spacers [26] are deposited. The crossing Nb stripe is deposited and patterned.…”

Section: Squid Fabricationmentioning

confidence: 99%

Two-Stage SQUID Amplifier for the Frequency Multiplexed Readout of the X-IFU X-Ray Camera

Kiviranta

Grönberg

Puranen

et al. 2021

IEEE Trans. Appl. Supercond.

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“…[2][3][4][5] Among the silicides, nickel-monosilicide ͑NiSi͒ is a potential candidate for deep submicron complementary metal-oxide-semiconductor ͑CMOS͒ technology because of its low resistivity, less Si consumption, one step thermal annealing at lower temperature, and ability to maintain low resistivity even for linewidths less than 0.1 m. 6 However, at higher processing temperatures during the down stream processing steps, the stability of silicide films poses a major challenge because of possible agglomeration into discrete islands. Their low resistivity and good thermal stability make them good candidates for reducing parasitic resistance in gate electrodes, contacts, local interconnects, etc.…”

Section: Introductionmentioning

confidence: 99%

Stability and composition of Ni–germanosilicided Si1−xGex films

Pey

Chattopadhyay

Choi

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Surface anisotropy in giant magnetic coercivity effect of cubic granular FeCo/SiO 2 and NiCo/SiO 2 films: A comparison with Néel's theory Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si (100) In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopyThe stability and composition of the Ni-germanosilicided films formed on relaxed Si 1Ϫx Ge x alloy has been studied in the temperature range of 400-900°C. During the solid phase thermal reaction between Ni and Si 1Ϫx Ge x , a nickel-germanosilicide Ni y (Si 1Ϫw Ge w ) 1Ϫy ternary phase (wрx and yϷ0.5) and a Ge-rich Si 1Ϫz Ge z phase (zϾx) have been found. In the lower annealing temperature range of 500°C, the Ge composition in the nickel-germanosilicide phase is similar to that of the Si 0.75 Ge 0.25 substrate. At the same time, germination of Si 1Ϫz Ge z (zϾx) takes place within the germanosilicide film. At higher annealing temperatures, Ni thermodynamically prefers to react with Si compared to Ge, and as a result, Ge segregates out from the germanosilicide grains to enrich Ge in the formed Si 1Ϫz Ge z (zϾx) grains in between the germanosilicide grains. On the other hand, the size of the germanosilicide grains increases almost linearly with annealing temperature while that for the Si 1Ϫz Ge z grains remains almost constant up to an annealing temperature of 700°C, and above which it increases sharply. As a result, the Ge-rich Si 1Ϫz Ge z grains make the germanosilicide film discontinuous, leading to an increase in the sheet resistance of the germanosilicide film.

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“…Integration of display driver circuits reduces the panel connections and improves display performance. [4][5][6] However, silicides have not yet been explored for their use in amorphous silicon circuit technology. 1 It has been shown that the a-Si TFT exhibits a high extrinsic series resistance, which reduces the effective mobility, indicative of the reduced device on-state current.…”

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confidence: 99%

Nickel Silicides Grown on Amorphous Silicon and Silicon-Germanium Thin Films

Sarcona¹

1999

Electrochem. Solid-State Lett.

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Nickel silicides are grown on amorphous silicon and silicon-germanium films at temperatures ≤ 300°C. Nickel silicides with sheet resistance of 11 and 15 Ω/ٗ were fabricated on amorphous silicon films at temperatures of 300 and 250°C, respectively. These resistances are comparable to silicides formed on single-crystal silicon. Such low resistances could also be obtained in samples where nickel was annealed with amorphous silicon-germanium at 300°C for 30 min; however, the resistances of the same films were considerably higher when the annealing temperature was 250°C. X-ray photoelectron spectroscopy seems to suggest that the high resistance in silicon-germanium samples which were annealed at 250°C was caused by formation of a Ni-Si-Ge cluster through physical mixing of atoms. However, at a temperature of 300°C, silicon and germanium reacted with nickel in separate layers.

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The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

Cited by 9 publications

References 6 publications

Two-Stage SQUID Amplifier for the Frequency Multiplexed Readout of the X-IFU X-Ray Camera

Two-Stage SQUID Amplifier for the Frequency Multiplexed Readout of the X-IFU X-Ray Camera

Stability and composition of Ni–germanosilicided Si1−xGex films

Nickel Silicides Grown on Amorphous Silicon and Silicon-Germanium Thin Films

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