The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure

Zhong-Tang, Zhou; Guo, Liwei; Zhang, Xing; Ding, Guojian; Chang-Lin, Tan; Li, Lyu; Liu, Jian; Liu, Xinyu; Jia, Haiqiang; Hong, Chen; Zhou, Jian

doi:10.7498/aps.56.6013

Acta Phys. Sin.

2007

DOI: 10.7498/aps.56.6013

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The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure

Zhou Zhong-Tang¹,

Liwei Guo²,

Xing Zhang³

et al.

Abstract: Variable temperature Hall effect measurement was performed on the AlGaN/AlN/GaN structure with AlN interlayer grown on sapphire by metalorganic chemical vapor deposition. It was measured that the mobility and density of the two dimensionalelectron gas at the interface of AlN/GaN were 1.4×104cm2·V-1·s-1 and 9.3×1012cm-2 at 2K，respectively. Low temperature variable magnetic field measurement manifested that only a single type of carriers contributed to the conductivity in this structure. Quantum Hall effect was … Show more

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Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

et al. 2012

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The performance of InGaN blue light-emitting diodes (LEDs) with different kinds of electron-blocking layers is investigated numerically. We compare the simulated emission spectra, electron and hole concentrations, energy band diagrams, electrostatic fields, and internal quantum efficiencies of the LEDs. The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer (EBL) has a strong spectrum intensity, mitigates efficiency droop, and possesses higher output power compared with the LEDs with the other three types of EBLs. These advantages could be because of the lower electron leakage current and more effective hole injection. The optical performance of the specifically designed LED is also improved in the case of large injection current.

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Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

et al. 2012

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Static surface states and bulk traps in AlGaN/GaN HEMT including hot electron and quantum effects

Hao¹,

Jun-Li²

2010

Acta Phys. Sin.

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The effects of static surface states and bulk traps on output characteristics have been studied. The effects of surface charge and bulk traps on current collapse, saturation current and knee voltage are investigated, and their relationships have been determined. The results show that the increase of the surface charge can exhaust the two-dimensional electron gas, and reduce the current collapse effect and saturation current, inducing the abnormal shift of the knee voltage. At the same time, reducing the bulk traps can alleviate the current collapse effect and increase the saturation current with the slight change of the knee voltage. At low lattice temperature, the hot electron effect and quantum tunneling effect play an important role in the current collapse. By using the hydrodynamics model, possible physical mechanisms are discussed, and an approach is proposed to reduce the effects of the static surface states and bulk traps on the output characteristics.

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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED

Wang¹,

Li²,

Yao³

et al. 2011

Acta Phys. Sin.

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In the High-power InGaN/GaN-based LED structures, p-AlGaN layer plays a role as electron blocking layer. In this paper, GaN/InGaN-based LED have been grown on sapphire by metal organic chemical vapor deposition (MOCVD), and the p-type doping mechanism and structural optimization of AlGaN layer were studied. The ways to change AlGaN components have been discussed. We found that the growth temperature, growth pressure and flow TMAl (mole ratio) have strong effect on the Al components through different mechanisms. In the AlGaN electron blocking layer, the Al composition is between 10%—30% and the electron could be well limited to the quantum well region, maintaining a high quality crystal material. The p-type doping efficiency of AlGaN layer is low, and there is a magnesium droop problem due to lack of hole injection. A new growth method is suggestece to solve the problem. Grown under optimal conditions, the p-type AlGaN inserted in a LED structure greatly improves the output optical power of LED device.

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The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure

Cited by 6 publications

References 0 publications

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

Static surface states and bulk traps in AlGaN/GaN HEMT including hot electron and quantum effects

Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED

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