Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

Chen, Jun; Fan, Guanghan; Zhang, Yunyan; Zheng, Shuwen; Yao, Guang-Rui

doi:10.1088/1674-1056/21/5/058504

Cited by 9 publications

(8 citation statements)

References 32 publications

(12 reference statements)

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“…The III-N materials is one of the best choices for making light emitters, due to their direct band gap and wide wavelength coverage. However, for thin film device, there are quite a lot of limitations, such as the low light extraction efficiency, and the difficulty to reach the green and orange wavelengths [334][335][336][337][338]. Changing the thin film structure into the NW geometry is a promising solution to those bottlenecks.…”

Section: Light Emittersmentioning

confidence: 99%

Elongated nanostructures for radial junction solar cells

et al. 2013

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In solar cell technology, the current trend is to thin down the active absorber layer. The main advantage of a thinner absorber is primarily the reduced consumption of material and energy during production. For thin film silicon (Si) technology, thinning down the absorber layer is of particular interest since both the device throughput of vacuum deposition systems and the stability of the devices are significantly enhanced. These features lead to lower cost per installed watt peak for solar cells, provided that the (stabilized) efficiency is the same as for thicker devices. However, merely thinning down inevitably leads to a reduced light absorption. Therefore, advanced light trapping schemes are crucial to increase the light path length. The use of elongated nanostructures is a promising method for advanced light trapping. The enhanced optical performance originates from orthogonalization of the light's travel path with respect to the direction of carrier collection due to the radial junction, an improved anti-reflection effect thanks to the three-dimensional geometric configuration and the multiple scattering between individual nanostructures. These advantages potentially allow for high efficiency at a significantly reduced quantity and even at a reduced material quality, of the semiconductor material. In this article, several types of elongated nanostructures with the high potential to improve the device performance are reviewed. First, we briefly introduce the conventional solar cells with emphasis on thin film technology, following the most commonly used fabrication techniques for creating nanostructures with a high aspect ratio. Subsequently, several representative applications of elongated nanostructures, such as Si nanowires in realistic photovoltaic (PV) devices, are reviewed. Finally, the scientific challenges and an outlook for nanostructured PV devices are presented.

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Section: Light Emittersmentioning

confidence: 99%

Elongated nanostructures for radial junction solar cells

et al. 2013

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“…[1] However, the total light output from these LEDs is still rather low. [2,3] Enhancing the efficiency of GaN-based LEDs is an area of active study. [4] There are two principal approaches for improving LED efficiency: the first is increasing the internal quantum efficiency, which is determined by the crystal quality and epitaxial layer structure, and the second is increasing the light extraction efficiency, which is primarily limited by the total internal reflection of the light generated from the active region at the semiconductor-air interface.…”

Section: Introductionmentioning

confidence: 99%

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

Zhang¹,

Xiu²,

Hua³

et al. 2014

Chinese Phys. B

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“…Despite the recent achievements -the internal quantum efficiency (IQE) of LEDs is now up to 80% -the light-extraction efficiency (LEE), which is only 26% for a planar GaN LED, still needs to be enhanced. [1][2][3] A major factor responsible for the poor light-extraction efficiency is the total internal reflection (TIR) when the angle of incidence exceeds the critical angle θ c determined by Snell's law. This is connected with the refractive index, which for GaN is 2.5 at 460 nm, whereas that of air is 1.0.…”

Section: Introductionmentioning

confidence: 99%

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

Wang¹,

Huang²

2013

Chinese Phys. B

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We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaNbased light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

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Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

Cited by 9 publications

References 32 publications

Elongated nanostructures for radial junction solar cells

Elongated nanostructures for radial junction solar cells

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

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