GaN hexagonal pyramids formed by a photo-assisted chemical etching method

Abstract

GaN hexagonal pyramids formed by a photo-assisted chemical etching method *Zhang Shi-Ying(张士英) a)b) , Xiu Xiang-Qian(修向前) a) † , Hua Xue-Mei(华雪梅) a) , Xie Zi-Li(谢自力) a) , Liu Bin(刘 斌) a) , Chen Peng(陈 鹏) a) , Han Ping(韩 平) a) , Lu Hai(陆 海) a) , Zhang Rong(张 荣) a) ‡ , and Zheng You-Dou(郑有炓) a) a)

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

“…Generally, cone-shaped nanoparticles or nanorods are found in etched c-GaN. 24,25 However, in the case of m-GaN, those shapes were not observed, and the surface of the m-plane remained flat with almost no etching because the easily etched dislocations were formed parallel to the growth plane in the crystal structure of m-GaN. However, in the pro-cess of m-GaN growth, vertical SFs also occur and are affected by the etching.…”