Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

Woo, Seohwi; Sangil, Lee; Choi, Uiho; Lee, Hyunjae; Kim, Minho; Han, Jaiyong; Nam, Okhyun

doi:10.1039/c6ce00642f

Cited by 6 publications

(2 citation statements)

References 35 publications

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“…Also, GaN can be used for high temperature devices and hence the contacts need to with stand elevated temperatures without breaking down. Free-standing GaN substrates [6][7][8] are thus expected to open the way to explore the intrinsic performance of GaN and its related alloys.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate

Mazari¹,

Ameur²,

Boumesjed³

et al. 2020

ETN

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The current–voltage (I–V) characteristics of Schottky diodes on free-standing GaN substrate are investigated by using electrical characterization and analytical modelling calculation. We have calculated the electrical parameters from experimental current-voltage curve by two methods: ln(I) and Cheung. So, we calculated different electrical parameters using experimental I-V curve such as saturation current, ideality factor, series resistance and barrier height. We have found from the first method, the ideality factor n (1.02), the barrier height fb (0.65 eV) and a series resistance Rs (84 Ω). From the second method, we have found, n (1.09), fb (0.79 eV) and Rs (79.58 Ω - 79.73 Ω). Using analytical approach, we plotted the theoretical curves for comparison with the experimental characteristic and also to determine the dominant current transport mechanism. The results found support an assumption that the dominant current mechanism in Au/n-GaN (free-standing substrate) Schottky diode is the thermionic current.

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Section: Introductionmentioning

confidence: 99%

Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate

Mazari¹,

Ameur²,

Boumesjed³

et al. 2020

ETN

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“…25) The GaN film is separated by cracks extending from the edge to the center along its c-plane, which can achieve stress-induced self-separation in heteroepitaxial GaN. 26,27) By adjusting the growth conditions, we obtained the homoepitaxial self-separated FS-GaN for the first time, and studied its stress state and separation mechanism.…”

mentioning

confidence: 99%

Study on the stress and mechanism of self-separated GaN grown by Na-flux method

Zong-liang

et al. 2021

Appl. Phys. Express

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A 2 inch free-standing c-plane GaN wafer was fabricated through in situ self-separation using HVPE-seed crystal etching back (HCEB) by intentionally adjusting the nitrogen pressure in the Na-flux growth process of GaN. First, adjust the nitrogen pressure in the reactor to a lower level to facilitate HCEB to form a large number of voids at the interface between the c-plane HVPE seed and the c-plane Na-flux GaN. After regrowth of approximately 340 μm thick Na-flux GaN, self-separation was achieved during the cooling process. The free-standing GaN wafer was almost stress-free as a result of strain relief by the in situ self-separation process, which was confirmed by room-temperature Raman and low-temperature photoluminescence measurements. It is supposed that the HCEB process can be applied to fabricate high-quality free-standing GaN wafers in the future.

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Effect of hydroxy carboxylates as complexing agent on improving chemical mechanical polishing performance of M-plane sapphire and action mechanism analysis

Niu²,

Hou³

et al. 2023

Ceramics International

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Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

Abstract: A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-separation from m-plane sapphire using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy (HVPE).

Cited by 6 publications

References 35 publications

Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate

Analysis of the current-voltage characteristic of the Schottky diode based on free-standing GaN substrate

Study on the stress and mechanism of self-separated GaN grown by Na-flux method

Effect of hydroxy carboxylates as complexing agent on improving chemical mechanical polishing performance of M-plane sapphire and action mechanism analysis

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