1992
DOI: 10.1002/adma.19920041112
|View full text |Cite
|
Sign up to set email alerts
|

The Top‐CARL, process: A patterning technique for organic materials

Abstract: The patterning of organic layer materials is often hindered by the effects of the conditions used to “develop” the resist material, for example high temperatures for strong bases, which attack the substrate. The process described here allows the patterning even of delicate layers of oriented nonlinear optical polymers. The figure shown a patterned polyimide film 115 μm thick.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

1999
1999
2003
2003

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(4 citation statements)
references
References 12 publications
0
4
0
Order By: Relevance
“…This is another method that we use in the fabrication of our bilayers. A general method for patterning organic materials is the Top-CARL technique, in which photoresist is silylated to make it resistant to RIE [147].…”
Section: Reviewmentioning
confidence: 99%
See 1 more Smart Citation
“…This is another method that we use in the fabrication of our bilayers. A general method for patterning organic materials is the Top-CARL technique, in which photoresist is silylated to make it resistant to RIE [147].…”
Section: Reviewmentioning
confidence: 99%
“…Thus, the maximum final PPy thickness is less than or equal to the thickness of the resist. (The Top-CARL process would circumvent this problem [147].) After the exposed PPy is removed, the gold layer can be wet etched directly (figure 11(e)).…”
Section: Ppy Deposition and Patterning Final Au Etchmentioning
confidence: 99%
“…These experiments were carried out with the aim to investigate dry development processes using O 2 -reactive ion etching (RIE). [21] PVBT films were UV irradiated (k = 254 nm) and exposed to an atmosphere containing (trimethylsilyl)-methylamine at 80 8C. However, in the UV illuminated zones of PVBT only a partial reaction of the NCS units to thiourea derivatives was achieved.…”
Section: Image Reversalmentioning
confidence: 99%
“…Generally, surface modification of photopatterned films of PVBT and PST-co-VBT with siliconorganic compounds may be a route to plasma developable resists using RIE. [21] At elevated temperatures (T l 80 8C), also with ammonia, ethylenediamine and propylamine some substitution of SCN groups occurred in unirradiated PST-co-VBT. However, under smooth reaction conditions (T f 50 8C, reaction time f 60 min) the addition of these amines to NCS units in the illuminated areas proceeded by far faster than the substitution of SCN units in the unirradiated areas.…”
Section: Image Reversalmentioning
confidence: 99%