The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

“…This function is derived from the thermionic current expression given in equation (1 The voltage dependence of the BH in the MIS diodes, that is, the barrier increase with increasing forward bias voltage in the forward bias I -V measurements comes from the potential change across the interfacial layer rather than from image force lowering. The potential drop across the HfO 2 interfacial layer varies with bias due to the electrical field present in the semiconductor and the change in the interface state charge as a result of the applied voltage, and thus modifies the BH [6][7][8][9][10][11][12][13][14][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54]. As mentioned by Budhraja et al [22,23], the interface Table 2.…”

Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer‐based heterojunction diode

“…Organic devices are being intensely studied as a low‐cost electronic technology during the last decade and these devices have recently remarked as viable alternatives to inorganic ones . The metal/organic semiconductor junction is an alternative to the metal/inorganic‐semiconductor junction devices and it has attracted the attention of many scientists . The organic layer/electrodes interface has been applied for the improvement of charge injection or collection, particularly due to incompatible energy levels between metal electrodes and organic materials .…”

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

“…Thus, due to the technological importance of metal-semiconductor Schottky contacts, a full understanding of their current-voltage (I-V) and capacitance-voltage (C-V) characteristics are of great interest [1][2][3][4][5][6][7][8][9]. Schottky contacts with low barrier height find applications in devices operating at cryogenic temperatures such as infrared detectors, sensors in thermal imaging, microwave diodes, gates of transistors and infrared and nuclear particle detectors [10][11][12][13][14].…”

“…Many experimental and theoretical studies of the current flow mechanism in Schottky barriers have been reported in the literature [2,6,[10][11][12][23][24][25][26]. For example, Hasegawa et al [27,28] have characterized both experimentally and theoretically electrical properties of nanometer-sized Schottky contacts which are successfully formed on n-GaAs and n-InP substrates by a combination of an electrochemical process and an electron-beam (EB) lithography.…”

“…In particularly, in the past few decades, some researchers have reported noteworthy works for physical and chemical properties of semiconductors like GaAs, Si, InP, etc. [10][11][12][13][14][27][28][29][30][31][32][33][34]. Güzeldir et al [13] studied the I-V and C-V characteristics of this Zn/ZnSe/n-Si/Au-Sb structure in wide temperature range by 20 K steps.…”