2012
DOI: 10.1088/1742-6596/400/4/042069
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The temperature dependence of Hall mobility of the oxide thin film In2O3-ZnO

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Cited by 3 publications
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“…For the electrodes, we deposited thin Au contacts on the PANI films. An external magnetic field H was perpendicularly applied to the film surface, of up to H = 1.35 T. The equipment used for the Hall measurement was reported in a previous paper [15]. We used the Keithley 6517B and 6514 electrometers for the DC voltage measurements, as well as the Keithley 220 programmable current source.…”
Section: Sample Preparation and Experimental Proceduresmentioning
confidence: 99%
“…For the electrodes, we deposited thin Au contacts on the PANI films. An external magnetic field H was perpendicularly applied to the film surface, of up to H = 1.35 T. The equipment used for the Hall measurement was reported in a previous paper [15]. We used the Keithley 6517B and 6514 electrometers for the DC voltage measurements, as well as the Keithley 220 programmable current source.…”
Section: Sample Preparation and Experimental Proceduresmentioning
confidence: 99%