The technology of hard glass layers on silicon substrates and their application in microwave semiconductor devices

Abstract

Paper describes the method ofpreparing of hard glass layers on silicon substrates. The thickness of the wafers run fromfiw to one hundred micrometers. Hard glass layers are applied for microwave semiconductor components as passivation or layers or thick dielectric supports for beam-leads contacts to reduce parasitic capacitance.

Design and Development of Single-Qubit Ion Trap on Glass and Si Substrates With RF Analysis and Performance Benchmarking

“…Possibilities to fabricate blind-vias and through glass vias (TGV) further extends the benefit of glass substrate for ion-trap implementation [3], as 3D integration with TGV and multilayer metallization option are essential features in multi-qubits quantum computing system, where up to thousands of RF and DC electrodes are required. Besides, by adjusting their coefficient of thermal expansion (CTE) to be close or even equal to Si substrate [4], the ion trap on glass can also be integrated into silicon substrate to combine the highperformance ion trap on-glass with other Si-circuit building blocks such as digital-to-analog converter, voltage regulator, low-pass filter, RF source, etc. to obtain full system integration.…”