The Technology Demonstration Module On-Board PROBA-II

Harboe-Sørensen, R.; Poivey, C.; Fleurinck, N.; Puimege, K.; Zadeh, Ali; Guerre, F. X.; Lochon, Frédéric; Kaddour, M.; Li, L; Walter, D.; Keating, A.; Jakšić, A.; Poizat, Marc

doi:10.1109/tns.2010.2095468

Cited by 43 publications

(15 citation statements)

References 4 publications

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“…The Brilliance SRAM used in this paper has a heavyion LET threshold 2.4MeV cm 2 /mg. The date code for these parts is 09254, which is equivalent to the SRAM F described [15] in [12]. The Alliance memory is referred to in the same work as SRAM C, with a threshold of <5MeV cm 2 /mg [15], and the ISSI memory as SRAM A, with a threshold of 2.1MeV cm 2 /mg.…”

Section: A Devices Under Testmentioning

confidence: 99%

Mechanisms of Electron-Induced Single-Event Latchup

Tali

Alía

Brügger

et al. 2019

IEEE Trans. Nucl. Sci.

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In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.Index Terms-Electrons, static random access memory (SRAM).

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Section: A Devices Under Testmentioning

confidence: 99%

Mechanisms of Electron-Induced Single-Event Latchup

Tali

Alía

Brügger

et al. 2019

IEEE Trans. Nucl. Sci.

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“…The SEL RPP depth of a deep submicron SRAM is estimated to be m using TPA laser testing [13]. In the recent latchup rate calculations, the SV thickness of deep submicron SRAMs is set to m [4], [6] or m [5], [7]- [9], [11]. In this paper, the main point is to investigate the influence of SV number on SEL rate and so the SV thickness is assumed to be the classical value of m.…”

Section: Sel Rate Predictionsmentioning

confidence: 99%

Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test

Han

Feng

et al. 2015

IEEE Trans. Nucl. Sci.

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Most classical approaches of single event effect rate prediction are based on the rectangular parallelepiped model of sensitive volume. However it is not clear about the number of sensitive volume in the device when predicting the in-flight single event latchup rate. As for memory device, there are two empirical practices to deal with the latchup sensitive volume number: one assumes that there is only one sensitive volume in the whole device; another assumes that there are as much sensitive volumes as the number of memory cells. The latchup sensitive volume number of a 4M-bits SRAM is determined as 63360 using pulsed laser mapping test in this work first. Based on the two assumed and measured sensitive volume number, the single event latchup rates of the device are calculated and compared. The results show that pulsed laser could be a powerful tool to obtain the real sensitive volume number in the device, which is significant for single event latchup rate prediction. The latchup rate will be either overestimated or underestimated with the assumption of the sensitive volume number as one or as much as the number of memory cells.Index Terms-In-flight rate, pulsed laser, sensitivity mapping, single event latchup (SEL), SRAM.

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“…This is one of the devices currently being flown in ESA's Proba 2 spacecraft in the Technology Demonstrator Module [6], [7]. Arrays of 300 laser pulses were delivered at 100 Hz pulse repetition rate (i.e., the run duration was 3 s).…”

Section: Sram See Sensitivity Mappingmentioning

confidence: 99%