The superconductive properties and structure of vacuum-deposited tin films

Hill, J S; Stoddart, C. T. H.; Stuart, P. R.

doi:10.1088/0022-3727/3/8/304

Cited by 10 publications

(8 citation statements)

References 18 publications

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“…-5 meV·cm and consistent with an energy ionization E A =30 meV in the limit of extreme dilution of the impurity, in agreement with the literature [17,18]. A compensation ratio of about 0.05 was obtained in the lightly doped samples, with a tendency to increase to about 0.2 when the RT hole density approaches 10 18 cm -3 .…”

Section: Electrical Measurementssupporting

confidence: 90%

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

Begotti¹,

Ghezzi²,

Longo³

et al. 2005

Cryst. Res. Technol.

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The properties of Zinc-doped GaAs, grown by MOVPE employing the tertiary buthyl arsine precursor, were studied as a function of the doping level, comprised within the (1×10) range. Hall effect measurements were performed as a function of temperature; the simultaneous analysis of the Hall hole density and Hall mobility gave the effective doping concentration, the thermal ionisation energy of the acceptor impurities and the compensation ratio. Fast Fourier Transform Photoluminescence measurements were performed on the GaAs layers; the results were correlated with those obtained from the electrical analysis. A comparison of the obtained data with the results of an analogous investigation, previously performed on intrinsically Carbon doped GaAs layers, allowed the following conclusions: a) the GaAs layers exhibit a low content of non-intentional impurities (< 10 14 cm -3); b) both Zinc and Carbon show a low compensation ratio; c) both Carbon and Zinc doped layers show electrical and optical properties comparable with the state of the art; d) Carbon intrinsic doping appears preferable for low-medium carrier concentrations, while Zinc appears preferable for medium-high carrier concentrations (higher than about 5×10 17 cm -3 ).

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Section: Electrical Measurementssupporting

confidence: 90%

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

Begotti¹,

Ghezzi²,

Longo³

et al. 2005

Cryst. Res. Technol.

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“…100 This behavior is the same as that observed in the insulating region of the non-magnetic accepter-doped p-type GaAs. 101 The Fermi level behavior in the paramagnetic region is caused by the screening effect due to the heavy Mn doping, which makes the IB position close to the VB. Meanwhile, E F increases as x increases in the ferromagnetic GaMnAs with x > 1%, which means that the Fermi level moves away from the VB.…”

Section: -13mentioning

confidence: 99%

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Tanaka

Ohya

Hai

2014

Applied Physics Reviews

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Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMS), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose, and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As, and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (InFe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

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“…A large number of papers are devoted to the study of the ionisation energy E , and its dependence on the acceptor density [54,80,85,861. We will omit the discussion of this topic and restrict ourselves to a consideration of pII of high purity crystals.…”

Section: Gallium Arsenidementioning

confidence: 99%

“…Mobility as a function of temperature for various p-GaAs samples. The experimental data are taken from Hill [85] (0, 0) and Zschauer [86] ( A ) , respectively. The full curves are calculated accounting for AC, NPO.…”

Section: Gallium Arsenidementioning

confidence: 99%