The size dependence of tin oxide atomic cluster nanowire field effect transistors

Abstract

Tin oxide (SnO(2)) cluster nanowires have been fabricated using atomic clusters as building blocks. Nanowires with widths of less than 100 nm were defined using electron beam lithography followed by deposition of Sn clusters which were subsequently thermally oxidized. The cluster nanowires were used to fabricate field effect transistors. The transistors were n-type and demonstrated a clear size-dependent behaviour. With zero gate bias the narrowest wires were depleted, both the carrier concentration and the conduction quickly increasing with wire width. This behaviour is attributed to the formation of a surface depletion region caused by Fermi level pinning. The width of the depletion region was estimated using the carrier concentration calculated from the transistor threshold voltages. The change in the wire conductance with UV illumination was also investigated. Illumination with 365 nm light increases the conduction by up to 40 times. This is attributed to a combination of an increase in carriers due to photo-desorption of oxygen from the surface of the wires and an increase in the mobility due to a reduction of inter-grain potential barrier height.

Facile synthesis of SnO2 nanocrystals coated conducting polymer nanowires for enhanced lithium storage

“…It is now recognized that the distinctly improved properties of nanoscale materials probably derives from their enlarged surface areas and quantum confinement effects. SnO 2 , as one of the most important semiconductive materials, has attracted extensive efforts for various applications in field effect transistors [4,5], solar cells [6,7], gas sensors [8e10], and catalyst supports [11]. Particularly, SnO 2 is a promising anode candidate in lithium ion batteries owing to its theoretical capacity of 782 mAh g À1 which is superior to the currently commercialized graphite (372 mAh g À1 ) [12,13].…”

Study on the annealing-dependent photoluminescence properties of SnO2 cluster-system structures

“…Although the decreasing of total interaction energy well explains the increasing EB value after 30 min annealing, the slight negative chemical shift of Sn3d and O1s peaks after 60 min annealing contradicts the calculation. Moreover, when l H2O converts into c H2O, the EB value will decrease according to equation (5). Detailed calculation found that there is a ~0.1 eV drop of EB, which is about half of the negative chemical shift of O2 peak, when the conversion completes.…”

“…Having these properties, SnO2 nanostructures can be used in various constructions of chemical sensors [1][2][3], field-emission transistors [4,5], dye-based solar cells [6], optoelectronic devices etc. [7].…”

Directed Self-Assembly: Expectations and Achievements

“…Brown et al [61] have achieved nanowires inside the lithographically fabricated trenches using nanocluster source. The nanoclustered nanowires usually grow at the apex of the trench (as shown in Fig.…”