2011
Study on the annealing-dependent photoluminescence properties of SnO2 cluster-system structures
Abstract: KEYWORDS SnO2 cluster-system structures were synthesized via a two-step temperature-rising thermal evaporation method with short oxidation time. Field emission scanning electron microscopy, X-ray diffraction and transmission electron microscopy were used to characterize the morphological and structural feature of the product as nanowire cluster and nanoparticle cluster. The photoluminescence spectra exhibit that, as annealing time in air increases, the intensity of the newly found strong ultra-violet emission …
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Cited by 9 publications
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Abstract
Smart CitationsHow this paper cites the one you are viewing
“…The peak at 382 nm is assumed to be generated below the shallow band of tetragonal SnO 2 . 19 The yellow emission at 610 nm is attributed to defect levels in the band gap of SnO 2 , which seem to have originated from defects during the growth phase. 20,21 As shown in Figure 2c, the main XRD peaks for Zn 2 SnO 4 are at (220) and (311), and the growth shows a cubic structure with a lattice constant a = 8.65 Å (ICDD No.…”
Section: Results
mentioning
confidence: 99%
Abstract
Smart CitationsHow this paper cites the one you are viewing
“…The peak at 382 nm is assumed to be generated below the shallow band of tetragonal SnO 2 . 19 The yellow emission at 610 nm is attributed to defect levels in the band gap of SnO 2 , which seem to have originated from defects during the growth phase. 20,21 As shown in Figure 2c, the main XRD peaks for Zn 2 SnO 4 are at (220) and (311), and the growth shows a cubic structure with a lattice constant a = 8.65 Å (ICDD No.…”
Section: Results
mentioning
confidence: 99%
“…In the PL spectrum (Figure e), UV emission at 382 nm and strong, broad yellow emission at 610 nm are observed. The peak at 382 nm is assumed to be generated below the shallow band of tetragonal SnO 2 . The yellow emission at 610 nm is attributed to defect levels in the band gap of SnO 2 , which seem to have originated from defects during the growth phase. , …”
Section: Results
mentioning
confidence: 99%
Abstract
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“…There are no spectral peaks in the region of the Sn-O phase oscillation of tin oxide (approximately 211 cm -1 [29]). Small peaks are observed at wave numbers of 148 cm -1 , 237 cm -1 , and 245 cm -1 , that can be explained by the presence of nonstoichiometric tin dioxide phases, such as Sn 2 O 3 and Sn 3 O 4 [30][31][32]. Peaks in the interval of 615-640 cm -1 indicates the presence of the SnO 2 phase.…”
Section: Raman Scattering Spectroscopy
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confidence: 97%
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“…The 482 nm band is relatively common for semiconductor oxides like M In 2 O 4 (M= Ca, Sr, Ba) or SnO 2 [38,39] confirming that it is caused by the oxygen related defects [40,41].…”
Section: Photoluminescence Spectroscopy
mentioning
confidence: 99%
