The semiconductors of MnTe<sub>4</sub> family: Physical properties, promising applications

Bekimbetov, R. N.; Vaipolin, A. A.; Konstantinova, N. N.; Kradinova, L. V.; Medvedkin, G. A.; Prochukhan, V. D.; Rud, Yu. V.; Tairov, M. A.

doi:10.1002/crat.2170221244

Cryst. Res. Technol.

1987

DOI: 10.1002/crat.2170221244

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The semiconductors of MnTe₄ family: Physical properties, promising applications

R. N. Bekimbetov

A. A. Vaipolin

N. N. Konstantinova

et al.

Abstract: Among the numerous magnetic semiconductors there is a family of ternary compounds MnX11Te4. For the first time the optical and electrical parameters of these materials as well as the methods of preparing of the diode structures were presented in works (AVERXJRVA et al. ; BEKIMRETOV e t al.). Investigations of the optical, electronic, photoelectric and luminescence properties of the ternary compounds MniIITe, with the magnetic

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“…The occurrence of valence band splitting can also be affected by other factors (for example, deviation of Mn and Ga(In) atoms from the ideal positions and the presence of stoichiometric vacancies in the lattice [27]). …”

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Optical absorption in layered MnGaInS4 single crystals

Niftiev

Тагиев

2012

Opt. Spectrosc.

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Recently, multicomponent compounds of the AB 2 X 4 type (A is Mn, Fe, Co, or Ni; B is Ga or In; and X is S, Se, or Te) have been of great interest because they can expand the functional possibilities of modern semiconductor electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. These compounds are promising for semiconductor devices of various functional purposes. Photosensitive structures were prepared based on these materials [7,8], heterojunc tions were fabricated on the basis of FeIn 2 Se 4 crystals [9], and nanostructures were synthesized from FeIn 2 S 4 and MnIn 2 S 4 compounds [10-12].New layered semimagnetic MnGaInS 4 semicon ductors were obtained in [13,14]. The electric, photo electric, and optical properties of MnGaInS 4 single crystals were analyzed in [15][16][17][18][19][20].We studied the optical absorption spectra of MnGaInS 4 single crystals in polarized and unpolarized light. MnGaInS 4 single crystals were grown by the Bridgman method. X ray diffraction analysis revealed that they are crystallized into the structure of single packet ZnIn 2 S 4 polytype with the lattice parameters а = 8.31 Å, с = 12.17 Å, and z = 1 (space group Р3m1) [13]. The spectral dependence α(hν) for MnGaInS 4 single crystals was measured in the temperature range of 77-300 K and at photon energies of 2.34-2.80 eV with a system based on an MDR 12 monochromator. Different single crystal samples 10-200 µm thick were investigated.The results of measuring α(hν) in unpolarized light at different temperatures are shown in Fig. 1. It can be seen that the dependence α(hν) becomes blue shifted with a decrease in temperature from 270 to 83 K. In this case, α(hν) in the range of photon energies of 2.37-2.74 eV changes from 2000 to 7000 cm -1 .These results were analyzed according to the theory of indirect and direct optical transitions [21][22][23][24]. The dependence α(hν) can be written aswhere α d , α i , and α b are, respectively, the optical absorption coefficients at direct transitions, at indirect transitions, and under background absorption. The CONDENSED MATTER SPECTROSCOPYAbstract-Optical absorption in MnGaInS 4 single crystals has been studied. Direct and indirect optical tran sitions are found to occur in the range of photon energies of 2.37-2.74 eV and in the temperature range of 83-270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E gd and E gi are -5.06 × 10 -4 and -5.35 × 10 -4 eV/K, respectively. MnGaInS 4 single crystals exhibit anisot ropy in polarized light at the absorption edge; the nature of this anisotropy is explained.

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Optical absorption in layered MnGaInS4 single crystals

Niftiev

Тагиев

2012

Opt. Spectrosc.

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The physical properties of FeIn 2 S 4 were studied in [1][2][3][4][8][9][10][11][12].

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AC electrical properties of FeIn2S4

et al. 2012

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FeIn 2 S 4 belongs to the ternary compounds of class AB 2 X 4 (where A = Mn, Fe, Co, Ni; B = Ga, In; and X = S, Se, Te) some of which are being extensively studied today [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. These compounds are promis ing for lasers, light modulators, photodetectors, and other magnetically controlled functional devices.The physical properties of FeIn 2 S 4 were studied in [1][2][3][4][8][9][10][11][12]. Specifically, the structure and magnetic properties of FeIn 2 S 4 were investigated in [1,4]. It was found that this compound is antiferromagnetic at tem peratures below Néel temperature T N = 4.2 K. In [8], the electrical properties of FeIn 2 S 4 in a static field were explored and the switching effect was discovered. Works [9,10] were devoted to the electrochemical properties of FeIn 2 S 4 nanocrystals. In [11,12], FeIn 2 S 4 based photosensitive structures were fabri cated. However, the ac properties of this compound have not been touched upon. In this work, we report experimental data for the ac electrical performance of FeIn 2 S 4 .FeIn 2 S 4 polycrystals were obtained by direct alloy ing of high purity (99.99%) elements taken in stoichi ometric amounts. It was found by the X ray diffraction method that the polycrystals have a spinel structure with lattice parameter a = 10.62 Å [1, 3]. The electri cal properties were measured on ~0.5 mm thick wafers cut from a FeIn 2 S 4 ingot on which silver paste electrodes (plates) were applied. The capacitors thus obtained were placed in a thermostat, where the tem perature was controllably varied between 293 and 400 K. The temperature was measured accurate to ±0.5 K. The capacitance and resistivity were measured with E7 20 digital immitance meters (frequency range 25-10 6 Hz). The measuring voltage applied to the sample was 1 V. Figure 1 plots capacitance C of the capacitor with FeIn 2 S 4 semiconductor inside versus frequency f at different temperatures. Permittivity ε was calculated from the formula .It was found that ε varies within 300-2800 in the temperature interval 293-373 K and the frequency range 5 × 10 3 -10 6 Hz. It is seen in Fig. 1 that, at tem peratures between 293 and 323 K, the capacitance first slowly decreases in the frequency range 5 × 10 3 -2 × 10 5 Hz and then, in the frequency interval 2.5 × 10 5 -5.0 × 10 5 Hz, a resonance is observed. As the temper ature rises further, the resonance disappears. The res onance effect can be explained in terms of the barrier model [17], since imperfect crystals may contain, along with high resistivity layers with local barrier grains, extended low resistivity barrier layers localized on inhomogeneities, such as dislocations, electrical C εε 0 S/d = Abstract-The frequency and temperature dependences of the ac capacitance and resistivity of FeIn 2 S 4 semiconductors are studied. Resonances are observed at certain temperatures in the frequency range (2.5-5.0) × 10 5 Hz. The permittivity of the crystals and the activation energy of charge carriers are determined. It is found that elec...

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“…The ternary compounds AB 2 X 4 (A = Mn, Fe, Co, Ni; B = Ga, In; X = S, Se, Te) represent the class of magnetic semiconductors, interest in which has continuously increased in recent years due to the possibility of extending the functional range of semiconductor devices [1][2][3][4][5][6]. On their basis, it is promising that lasers, light modulators, photodetectors, and other functional devices controlled by magnetic fields will be fabricated.…”

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10.1007/s11453-008-3003-8

2010

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The semiconductors of MnTe₄ family: Physical properties, promising applications

Cited by 9 publications

References 1 publication

Optical absorption in layered MnGaInS4 single crystals

Optical absorption in layered MnGaInS4 single crystals

AC electrical properties of FeIn2S4

10.1007/s11453-008-3003-8

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The semiconductors of MnTe4 family: Physical properties, promising applications

Cited by 9 publications

References 1 publication

Optical absorption in layered MnGaInS4 single crystals

Optical absorption in layered MnGaInS4 single crystals

AC electrical properties of FeIn2S4

10.1007/s11453-008-3003-8

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The semiconductors of MnTe₄ family: Physical properties, promising applications