A. A. V m m et al.: The Structure and Properties of ZnSnPs 435 phys. stat. sol. 29, 435 (1968) A d e m y of Sciences of the USSR, Leningrad The Structure and Properties of the Semiconducting Compound ZnSnP, BY A. A. V m o m , N. A. GORYUNOVA, L. I. KLESHCEIINSKII, G. V. LOSHAEOVA, and E. 0. O s w o vThe position of the P-atom in the ordered structure of chalcopyrite type ZnSnP, is determined: X = 0.239. Crystals with various degrees of ordering are obtained by varying the cooling rate of the melt during growth. The partly ordered crystals show a mosaic structure and consist of blocks having chalcopyrite or sphalerite structure. The dependence of the degree of ordering on the cooling rate is established. From measurements at room and liquid nitrogen temperature the Debye temperature is found to be the same for crystals with different degree of ordering. The mean-square displacements of atoms as well as the microhardness increase with disordering, and may be related to defect formation. A decrease in the Hall mobility of holes is directly connected with the degree of disordering.Die Lage des P-Atoms in ZnSnP, mit geordneter Chalkopyritstruktur wird bestimmt: X = 0,239. Kristalle mit verschiedenem Ordnungsgrad wurden durch Variation der Abkiihlgeschwindigkeit der Schmelze wiihrend der Ziichtung erhalten. Die teilweise geordneten Kristalle besitzen Mosaikstruktur und bestehen aus Blockchen mit Chalkopyritoder Sphaleritstruktur. Die Abhiingigkeit des Ordnungsgrades von der Abkiihlgeschwindigkeit wird festgestellt. Aus Messungen bei Raumtemperatur und der des flussigen Stickstoffs wird gefunden, daD die Debye-Temperatur fur Kristalle mit unterschiedlichem Ordnungsgrad gleich ist. Sowohl die mittleren Quadrate der Atomverlagerungen als auch die Mikrohiirte wachsen mit zunehmender Fehlordnung und konnen zu der Defektbildung in bezug gesetzt werden. Die Zunahme der Hallbeweglichkeit der Locher ist direkt rnit dem Fehlordnungsgrad verbunden.

AbsLracLThe CuFeEz ternary mmpound with a layered crystalline structure has teen ludied. nre mmpound Cr paramagnetic in lhc temperature range IO-ZM) K Invesligation of the p ( T ) temperature dependence demonstrates the fermn character of the carrier transpon with the Molt diffusional mechanism. ?he obtained power dependences n ( T ) , R ( T ) and o ( T ) allow us LO mnclude lhal CuFeTe belongs LO the gapless semiconductors. rile temperature behaviour of n(T), R ( T ) and o(T) can be explained by examining features from the electron spectrum of CuFeTez under mndilions where the characrer of the ~a n i e r

The structural parameters of two modifications of AgInS, are determined. The geometrical model of phase transition is discussed. Crystallochemical comparison reveals the absence in the two modifications of significant differences in atomic interactions. The changes in atomic interaction with the temperature increase and the role of dynamical changes in phase transition are discussed.Onpenenem1 napaMeTpb1 CTPYKTYP ~B Y X Mom@nmautifi AgInS,. PaccMoTpeHa reoMeTpMqeCKaR MOHeJIb (pa30BOr0 nepeXOna. n y T e M KPACTaJIJIOXAMAYeCKOrO CpaBHeHRcI nOKa3aHO OTCYTCTBLl e CyWeCTBeHHbIX pZl3JILlWlfi B Mel KaTOMHOM B3aHMOAefiCTBHH y nByX MOnLl@HHaUHfi. 0 6 c y m n a e~c~ XapaKTep H3MeHeHHfI MelfEaTOMHOrO B3aLlMOnefiCT-Ternary semiconductors AIBIIICX*, the crystallochemical analogues of AIIBV1 compounds ape of interest for use in nonlinear optics and polarization optoelectronics. Unlike other semiconductors of this type AgInS, compound exists in two modifications: low-temperature tetragonal phase (t) and high-temperature orthorhornbic phase (r), being in equilibrium above 620 "C and stable at room temperature. Current paper includes the results of the detailed study of AgInS, structure and mechanism of its phase transition. The structure of r-AgInS, existing ia some other ternary tetrahedral compounds is analogous t o that of wurtzite. The transformation of hexagonal wurtzite cell into orthorhombic one is carried out by the doubling of the base smaller edge of the first in orthogonal setting. The symmetry is redxced to Pna2, ((2:"). Annealing a t 600 "C results in structural transformation but the ordinary single crystal with chalcopyrite-type structure is not yet formed. Weissenberg studies show these crystals to be twins. Twin parts are rotated by 180 "C about each other within one of { 112}t,t planes. This type of twinning of cubic crystals as well as analogous one along (111) is observed in crystal growing of ternary and binary compounds from solution or vapour phase. But the characteristic feature of investigattd AgInS,

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The structure of crystalline CdGeP2 was refined by finding the phosphorus parameter x= 0.283. The radial distribution curve of amorphous CdGeP2 was obtained by a diffractometric technique. From the shape of the first peak it could be inferred that the short-range order in the crystal is preserved in the amorphous and, presumably, in the molten phase.

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