Superstructure Ga4InAs5

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs2 thin films

“…Assuming a Poisson ratio ν value of 1/3, the computed free-standing lattice constant a is 5.884 Å. This value is slightly larger than the reported values of bulk ZnSnAs 2 lattice constant a of the chalcopyrite phase (a cp = 5.852 Å) and sphalerite phase (a sp = 5.8537 Å) [13,14]. Nevertheless, this slight difference in lattice constant was expected because the growths were performed using the LT-MBE (T s = 300 °C) technique which introduces defects, causing lattice constant variations.…”

Short, intermediate and mesoscopic range order in sulfur-rich binary glasses

“…The 475 cm À1 feature is common to S-S vibrations in all forms of sulfur from chains to rings [20,21], and in the absence of characteristic ring vibrations indicates a chainlike bonding of sulfur species. Similarly, only two features at 475 and 495 cm À1 were found for AsS x in the domain (1) in addition to broad unresolved lines at %340 cm À1 , characteristic of As-S vibrations in the AsS 3/2 pyramidal units. The 495 cm À1 feature was attributed to S-S vibrations in the sulfur dimers @As-S-S-As@ [17].…”

“…The local structure of binary chalcogenide glasses was extensively studied using neutrons and X-rays in the 1960s and 1970s [1][2][3][4]. Many important structural features were discovered such as the 8-N rule for the local coordination of species in the glass network, chemical ordering for both stoichiometric and non-stoichiometric compositions, a similarity in the short-range order between crystals and glasses of the same composition, and the existence of ordering on intermediate-range scale manifested by the first sharp diffraction peak at low Q.…”

Fiber Field‐Effect Device Via In Situ Channel Crystallization

“…Semiconductor glasses in the pseudo-binary system As 40 Se 60 -As 40 Te 60 reconcile these two opposing requirements. [8][9][10][11] These glasses are compatible with a thermal co-drawing process at low Te content while their crystallization is signifi cantly promoted as the content of Te increases. [ 6 , 8-10 ] The glass As 40 Se 52 Te 8 was found to be a good composition because of its use as an amorphous semiconductor for thermal drawing and its ability to be subsequently crystallized in situ.…”