The Selection of Starting Material for Neutron-Transmutation Doped Silicon

Kramer, Horst G.

doi:10.1007/978-1-4613-3261-9_14

Cited by 1 publication

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“…The technique provides easy, cheap, low-temperature, environmental friendly process of production of solar cells and other semiconductor devices , for example X-ray detectors, in which deep p-n junctions (>> 1 μm) are used [11] [12]. This makes it possible to replace the widely used practice of maintaining p-n junctions by technologies based on elevated temperature, those which involve energy-expansive and toxic processes [2]. Due to physical nature and characteristics of generation of an inverse p-n junction, easier and more efficient techniques in the production of semiconductor devices are applicable thus achieving fabrication technology, which involves the formation of two-dimensional (flat) p-n junctions over a large area that is necessary for solar cells and similar devices.…”

Section: Environment-friendly Low-temperature Technique Of Formation mentioning

confidence: 99%

Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

Buzynin¹,

Buzynin²,

Шенгуров³

et al. 2017

GSC

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In the present paper, some novel opportunities for the development of highefficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside; 2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 − 2) × 10 5 cm −2 density of the threading dislocation in the GaAs layer. 218shown to be suitable for the use as an ideal antireflecting material with high protective and anticorrosive properties.

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Section: Environment-friendly Low-temperature Technique Of Formation mentioning

confidence: 99%