We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2)∙105 cm-2 and the surface RMS roughness value was under 1 nm.
The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their morphology, structure, and transport properties is studied. GeSn layers with a thickness of 0.5 μm, obtained by the hot‐wire chemical vapor deposition method at 300 °C without annealing, are uniform with a surface roughness of less than 1.0 nm. It is shown that the incorporation of 1% Sn into the Ge lattice makes it possible to significantly increase the hole mobility of the GeSn layers from 30 to 140 cm2 V−1 s−1 despite the small crystallite grain size of 35–45 nm.
In the present paper, some novel opportunities for the development of highefficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside; 2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 − 2) × 10 5 cm −2 density of the threading dislocation in the GaAs layer.
218shown to be suitable for the use as an ideal antireflecting material with high protective and anticorrosive properties.
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