The scanning optical microscope: A powerful tool for failure analysis of electronic devices

Azzini, G.A.; Arman, Giuseppina; Montangero, P.

doi:10.1016/0026-2714(92)90461-s

Cited by 6 publications

(3 citation statements)

References 21 publications

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“…Scanning optical microscope techniques are powerful supports to such investigation; their different analytical procedures are quite new and offer high lateral and in-depth resolution, high sensitivity and the chance of exploring precise device volumes [1].…”

Section: Introductionmentioning

confidence: 99%

Localization of crystallographic defects in failed laser diodes using optical probes

et al. 1993

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A precise localization of dark line defects in failed A1GaAs/GaAs laser diodes has been achieved by means of scanning optical microscope (SOM) techniques.The analytical scheme has been based on optical beam induced current (OBIC) and photoluminescence (PL) at three photon probes and different device bias voltages. The imaging analysis has been associated to a progressive chemical etching of the semiconductor material. Numerical simulation of the experiment has been performed for results interpretation.Results are in good agreement with previously published theories and with TEM analysis. The proposed analytical procedure can be applied to a wide variety of devices.development of dark line defects (DLDs) crossing the active stripe in the <100> direction.Previous studies on DLDs nature revealed that they consist of a network of dislocations generated from a single dislocation crossing the buffer n-A1GaAs, the active GaAs and the cladding p-A1GaAs layers [2]. The most accepted model on the origin of the dislocation network involves the presence of point-defects at the heterostructure 250

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Section: Introductionmentioning

confidence: 99%

Localization of crystallographic defects in failed laser diodes using optical probes

et al. 1993

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“…High resolution scanning optical microscopy measurements in the photoluminescence mode [19] allowed to identify the position of the failures induced by the electrostatic discharges. In Fig.8 typical photoluminecence maps after device destruction for all the four APD types are reported, where the defect position is clearly revealed by dark spots that were absent in the photoluminescence images taken before ESD testing.…”

Section: Iicl Photoluminescence Imagingmentioning

confidence: 99%

Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors

Neitzert

Cappa

Crovato

1997

Proceedings Electrical Overstress/Electrostatic Discharge Symposium

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An electrostatic discharge sensitivity study of four different types of InGaAsAnP avalanche photodiodes revealed that destruction occurred generally during negative pulse application at pulse amplitudes between 700V and 1400V. Photoluminescence and differential phase contrast imaging has been used for failure localization. A correlation between the location of the device breakdown and the active area inhomogeneity has been found for one type of avalanche photodiode.

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“…In this latter case, it is possible to examine devices during their operative life without inducing negative effects or influencing their behaviour. The preferred specialistic techniques are optical beam induced current (OBIC) and photoluminescence (PL) [3].…”

Section: Introductionmentioning

confidence: 99%

A SOM approach to the failure physics of optoelectronic devices

Montangero

Azzini

Liberatore

et al. 1993

31st Annual Proceedings Reliability Physics 1993

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Optical beam induced current (OBIC) and photoluminescence (PL) implemented in a scanning optical microscope (SOM) have been extensively used in the study of the degradation mechanisms of optoelectronic devices. High sensitivity and spatial resolution in the localization of defects are demonstrated, unique analytical schemes are described and the new confocal photoluminescence (CPL) technique is introduced. Theoretical analysis and computations support the experimental results.

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The scanning optical microscope: A powerful tool for failure analysis of electronic devices

Cited by 6 publications

References 21 publications

Localization of crystallographic defects in failed laser diodes using optical probes

Localization of crystallographic defects in failed laser diodes using optical probes

Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors

A SOM approach to the failure physics of optoelectronic devices

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