Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors

Neitzert, H. C.; Cappa, V.; Crovato, R.

doi:10.1109/eosesd.1997.634222

Cited by 9 publications

(4 citation statements)

References 15 publications

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“…The first layer on top is the p-type InP formed by Zn diffusion. Guard ring is formed to avoid the edge breakdown at the p-type InP diffused region (Neitzert et al, 1997). The intrinsic InP layer (~500nm) below the p-type InP serves as the multiplication layer (M-layer).…”

Section: Methodsmentioning

confidence: 99%

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Huang¹,

Chang²,

Jan³

2019

APR

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In the present era of big data and 5G wireless, both microelectronic and photonic components are indispensable building blocks. For microelectronics, device miniaturization has been following Moore's law to attain higher speed and greater functionality. For photonics, similar device scaling is also evolving in both lasers and photodiodes to transmit high data rates of 25 Gb/s and beyond. However, such device miniaturization may impose challenges such as reliability and fabrication that require careful scientific and engineering studies. In particular, the reliability understanding of photonic device scaling is fairly rudimentary with only scattered reports. In this paper, we study the device and reliability scaling of nanoscale avalanche photodiodes (APDs). The device miniaturization of APDs mainly involves thickness reduction in the charge control and multiplication layers. The layer reduction however causes an increase in breakdown field that may adversely affect reliability in several aspects such as electrical/optical overload and electrostatic discharge (ESD). We present a new reliability degradation model of APDs based on the breakdown field and correlate it with the experimental data. Empirical reliability equations are instituted to establish quantitative formulation. We discuss the overload and ESD performances as a function of breakdown field for both planar-type and mesa-type APD structures.

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Section: Methodsmentioning

confidence: 99%

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Huang¹,

Chang²,

Jan³

2019

APR

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“…The breakdown voltage is typically measured at reverse current of 10 μA. The avalanche breakdown has been formulated to study the impact ionization coefficients of electrons and holes [33][34][35]. The second parameter is the dark current that is typically measured at reverse bias below the breakdown voltage.…”

Section: Nanoscale Iii-v Semiconductor Photodetectorsmentioning

confidence: 99%

Nanoscale III-V Semiconductor Photodetectors for High-Speed Optical Communications

Huang¹,

Jan²,

Chang³

et al. 2018

Two-Dimensional Materials for Photodetector

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Nanophotonics involves the study of the behavior of light on nanometer scale. Modern nanoscale semiconductor photodetectors are important building blocks for high-speed optical communications. In this chapter, we review the state-of-the-art 2.5G, 10G, and 25G avalanche photodiodes (APDs) that are available in commercial applications. We discuss the key device parameters, including avalanche breakdown voltage, dark current, temperature dependence, bandwidth, and sensitivity. We also present reliability analysis on wear-out degradation and optical/electrical overload stress. We discuss the reliability challenges of nanoscale photodetectors associated with device miniaturization for the future. The reliability aspects in terms of high electric field, Joule heating, and geometry inhomogeneity are highlighted.

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“…Avalanche photodiode (APD) is a very critical receiver component in commercial and military applications owing to its performance advantages such as high sensitivity, high signal-to-noise ratio, and low dark current [1][2][3][4][5]. One of the major APD applications is for passive optical network (PON) where the optical line terminal (OLT) at the service provider's central office connects with a number of optical network units (ONUs) at multiple points near the end users [6,7].…”

Section: Introductionmentioning

confidence: 99%

Novel failure mechanism of nanoscale mesa‐type avalanche photodiodes under harsh environmental stresses

Huang

Chang²,

Chou³

et al. 2021

IET Nanodielectrics

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Avalanche photodiode (APD) is an indispensable receiver component because of its high bandwidth and low noise performance. Recently, APD reliability, under harsh environmental stresses such as high heat and humidity, has drawn great interest in the applications of passive optical network, wireless, military, and free space optics. The authors study the APD degradation under the harsh environment of high humidity and high bias. The failure morphology through cross‐sectional scanning electron microscopy is shown, and a new moisture degradation model based on electrochemical oxidation to account for the failure mechanism is developed.

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Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors

Cited by 9 publications

References 15 publications

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Nanoscale III-V Semiconductor Photodetectors for High-Speed Optical Communications

Novel failure mechanism of nanoscale mesa‐type avalanche photodiodes under harsh environmental stresses

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