2013
DOI: 10.1063/1.4790875
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The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

Abstract: Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxide (SiO x :H) interlayers with different metals (silver, aluminium, and chromium) in standard p-i-n a-Si:H solar cells. We use a unique inverse modeling approach to show that in most back reflectors the internal meta… Show more

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Cited by 27 publications
(16 citation statements)
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“…The p-layer, i-layer and n-layer of the p-i-n diode exhibit a nominal thickness of 20 nm, 300 nm and 10 nm, respectively. Afterwards, a 100 nm ZnO layer is prepared on the p-i-n diode to reduce parasitic losses in the metal back reflector [3,[6][7][8]22,23]. Finally, a silver (Ag) back reflector is deposited.…”
Section: Device Fabricationmentioning
confidence: 99%
See 2 more Smart Citations
“…The p-layer, i-layer and n-layer of the p-i-n diode exhibit a nominal thickness of 20 nm, 300 nm and 10 nm, respectively. Afterwards, a 100 nm ZnO layer is prepared on the p-i-n diode to reduce parasitic losses in the metal back reflector [3,[6][7][8]22,23]. Finally, a silver (Ag) back reflector is deposited.…”
Section: Device Fabricationmentioning
confidence: 99%
“…Wide band gap silicon oxide (Si 1-x O x ) layer is used as p-layer to minimize the optical losses of the front contact [7,8,21]. The p-layer, i-layer and n-layer of the p-i-n diode exhibit a nominal thickness of 20 nm, 300 nm and 10 nm, respectively.…”
Section: Device Fabricationmentioning
confidence: 99%
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“…Second, to look at the effects of the catalyst and electrolyte,t he electrochemical characteristics were measured (Figure 7c). [30,32] Figure 7b showst hat when no (n)nc-SiO x :H is included, ab ig fraction of the light with wavelengths higher than 450 nm is not absorbed. The (n)nc-SiO x :H thickness can change the optical performance of the photoelectrode, as well as affect possible tunnelling effects through this layer.M oreover,i ft he layer is too thin, pinholes might appear creating short-circuit paths.…”
Section: Photocathode Optimization and Stabilitymentioning
confidence: 99%
“…At the back side, fingers of p-and n-doped SiO x are alternated and contacted with silver, to create hole-and electron-selective contacts, respectively. Such doped materials are chosen for their relatively large bandgap (E g ~2 eV), ensuring transparency at long wavelengths [30,31], and for their good thermal stability. The gaps between metallic stripes is covered with a distributed Bragg reflector (DBR), significantly reducing transmittance losses which would otherwise take place.…”
Section: Back Contact Design and Optimizationmentioning
confidence: 99%