The Reverse Leakage Current of Present-Day Manufactured Silicon PN Junctions and Their Maximum Permissible Operation Temperature

Obreja, V.V.N.

doi:10.1109/isdrs.2005.1596098

2005 International Semiconductor Device Research Symposium

DOI: 10.1109/isdrs.2005.1596098

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The Reverse Leakage Current of Present-Day Manufactured Silicon PN Junctions and Their Maximum Permissible Operation Temperature

V.V.N. Obreja¹

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The semiconductor-dielectric interface from PN junction edge and the voltage dependence of leakage reverse current

Obreja

2007

2007 International Semiconductor Device Research Symposium

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The Reverse Leakage Current of Present-Day Manufactured Silicon PN Junctions and Their Maximum Permissible Operation Temperature

Cited by 4 publications

References 4 publications

The semiconductor-dielectric interface from PN junction edge and the voltage dependence of leakage reverse current

The semiconductor-dielectric interface from PN junction edge and the voltage dependence of leakage reverse current

On the Maximum Permissible Working Voltage of Commercial Power Silicon Diodes and Thyristors

The PN Junction Passivation Process and Performance of Semiconductor Devices

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