2007 IEEE International Symposium on Industrial Electronics 2007
DOI: 10.1109/isie.2007.4374631
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On the Maximum Permissible Working Voltage of Commercial Power Silicon Diodes and Thyristors

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Cited by 2 publications
(2 citation statements)
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“…With operating voltage and temperature above the rating parameters, leakage current increases dramatically and the diodes fail into short circuit at the chip's peripheral surface [14,15]. Experiments show that the diodes operation temperature can be increased without risks of failure by improving the junction edge current control, like a junction passivation process [16,17]. A further research reveals the mechanism is junction carrier avalanche multiplication, and the weak spots are near the chips' edge [18].…”
Section: Rising Of Leakage Currentmentioning
confidence: 99%
“…With operating voltage and temperature above the rating parameters, leakage current increases dramatically and the diodes fail into short circuit at the chip's peripheral surface [14,15]. Experiments show that the diodes operation temperature can be increased without risks of failure by improving the junction edge current control, like a junction passivation process [16,17]. A further research reveals the mechanism is junction carrier avalanche multiplication, and the weak spots are near the chips' edge [18].…”
Section: Rising Of Leakage Currentmentioning
confidence: 99%
“…The degradation of power diodes occurs due to electrical and temperature stresses [47]. The failure modes of the diode are short circuit and open circuit failure [48].…”
Section: Rectifier Diode Faultsmentioning
confidence: 99%