The PN Junction Passivation Process and Performance of Semiconductor Devices

Obreja, V.V.N.

doi:10.1109/isse.2007.4432865

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…An example is shown in Figure 2 junction diode from a single phase rectifier bridge (35A, 1000V) available as commercial device at this time, [5]. The junction is plane and passivated by means of a silicon rubber layer, [6]. This layer has also the role of a buffer between the junction peripheral surface of the silicon die and the epoxy resin material in the package.…”

Section: Experimental Results Discussionmentioning

confidence: 99%

The blocking leakage current of packaged silicon devices after their storage at 250 °C ambient temperature

Obreja

2008

2008 31st International Spring Seminar on Electronics Technology

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Samples of commercial packaged silicon devices (diodes, thyristors, power MOSFETs) have been stored at 250 o C ambient temperature for durations of 4 up to 100 hours. Comparisons of electrical characteristics measured before and after storage at this temperature revealed significant change in the level of the blocking leakage current for PN junctions with organic material passivation. The measured electrical characteristics with significant increase or decrease in the leakage current level provide useful information for the leakage current flow at the junction periphery. Linearity on a portion of electrical characteristic with deviation from this at higher applied voltage is revealed for dominant leakage current at the junction edge. Inorganic dielectric passivated junctions with stable leakage current after storage at high temperature have a current level comparable with the increased current after storage from similar junctions passivated with silicone rubber (organic material). Because of significant leakage current at the junction edge, stable electric characteristics during and after storage at high temperature can become unstable when bias voltage is applied. Reliable operation of silicon devices above the known limit of 150 -200 o C is possible by further reduction of the leakage current flow through the silicon-passivating dielectric interface existing at the PN junction periphery.

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Section: Experimental Results Discussionmentioning

confidence: 99%

The blocking leakage current of packaged silicon devices after their storage at 250 °C ambient temperature

Obreja

2008

2008 31st International Spring Seminar on Electronics Technology

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Surface Leakage of Zener Diode and Its Degradation Behaviour due to Diminishing Field Effect Passivation

Joseph,

Dirk

2024

2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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Leakage current voltage dependence and performance of power semiconductor devices in the breakdown (avalanche) region

Obreja

2008

2008 IEEE Power Electronics Specialists Conference

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The PN Junction Passivation Process and Performance of Semiconductor Devices

Cited by 5 publications

References 8 publications

The blocking leakage current of packaged silicon devices after their storage at 250 °C ambient temperature

The blocking leakage current of packaged silicon devices after their storage at 250 °C ambient temperature

Surface Leakage of Zener Diode and Its Degradation Behaviour due to Diminishing Field Effect Passivation

Leakage current voltage dependence and performance of power semiconductor devices in the breakdown (avalanche) region

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The PN Junction Passivation Process and Performance of Semiconductor Devices

Cited by 5 publications

References 8 publications

The blocking leakage current of packaged silicon devices after their storage at 250 &#x00B0;C ambient temperature

The blocking leakage current of packaged silicon devices after their storage at 250 &#x00B0;C ambient temperature

Surface Leakage of Zener Diode and Its Degradation Behaviour due to Diminishing Field Effect Passivation

Leakage current voltage dependence and performance of power semiconductor devices in the breakdown (avalanche) region

Contact Info

Product

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The blocking leakage current of packaged silicon devices after their storage at 250 °C ambient temperature

The blocking leakage current of packaged silicon devices after their storage at 250 °C ambient temperature