The Reaction and Materials Chemistry of [Sn6(O)4(OSiMe3)4]: Chemical Vapour Deposition of Tin Oxide

Barbul, Ioana; Johnson, Andrew L.; Kociok‐Köhn, Gabriele; Molloy, Kieran C.; Silvestru, Cristian; Sudlow, Anna L.

doi:10.1002/cplu.201300104

Cited by 26 publications

(25 citation statements)

References 33 publications

(51 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Other dopants for SnO 2 have also been investigated, including Mg in an attempt to achieve high conductivity and transparency. 220 Powder XRD confirmed the formation of SnO (and no Sn metal), which was surprising given the higher temperatures used in these depositions. A stannous ureid compound (Fig.…”

Section: Ternary Main Group Tcosmentioning

confidence: 94%

Solution based CVD of main group materials

2016

View full text Add to dashboard Cite

This critical review focuses on the solution based chemical vapour deposition (CVD) of main group materials with particular emphasis on their current and potential applications. Deposition of thin films of main group materials, such as metal oxides, sulfides and arsenides, have been researched owing to the array of applications which utilise them including solar cells, transparent conducting oxides (TCOs) and window coatings. Solution based CVD processes, such as aerosol-assisted (AA)CVD have been developed due to their scalability and to overcome the requirement of suitably volatile precursors as the technique relies on the solubility rather than volatility of precursors which vastly extends the range of potentially applicable compounds. An introduction into the applications and precursor requirements of main group materials will be presented first followed by a detailed discussion of their deposition reviewed according to this application. The challenges and prospects for further enabling research in terms of emerging main group materials will be discussed.

show abstract

Section: Ternary Main Group Tcosmentioning

confidence: 94%

Solution based CVD of main group materials

2016

View full text Add to dashboard Cite

show abstract

“…Meanwhile, among the contents of Table , the atomic‐layer deposition (ALD) method has been demonstrated by Han et al for growing p‐type SnO thin films, showing a polycrystalline structure and Hall mobility of 2.9 cm 2 V −1 s −1 . Besides ALD, chemical routes like chemical vapor deposition (CVD) and aerosol‐assisted CVD have also been successfully employed in the fabrication of the SnO thin films; however, no Hall measurement results were shown …”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

View full text Add to dashboard Cite

The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

show abstract

“…SnO thin films have also been deposited using [Sn 6 (O) 4 (OSiMe 3 ) 4 ]a nd [{Sn(OSiMe 3 ) 2 } 2 ]a st he Sn ligands. [37] In these reactions, it was found that the temperature of deposition was key to achieving SnO thin films. At ad eposition temperatureo f450 8C, SnO thin films were achieved from both of the precursors.…”

Section: Deposition Of Binary Metal Oxide and Dopedmetal Oxide Materialsmentioning

confidence: 99%

Aerosols: A Sustainable Route to Functional Materials

Powell

Carmalt

2017

Chemistry A European J

View full text Add to dashboard Cite

Sustainability is an increasingly important topic in the design and manufacture of materials, with the need to reduce the environmental impact of producing materials being of paramount significance. A competing interest to this is the ability to produce functional materials in large volumes from a fast, on-line process, which can be integrated easily into existing industrial setups. Herein, we present aerosol-assisted chemical vapour deposition (AACVD) routes to advanced functional materials. We will show that by careful design of precursors and manipulation of deposition conditions, it is possible to achieve high sustainability whilst maintaining fast growth rates and large scale production of thin film functional materials.

show abstract

The Reaction and Materials Chemistry of [Sn₆(O)₄(OSiMe₃)₄]: Chemical Vapour Deposition of Tin Oxide

Cited by 26 publications

References 33 publications

Solution based CVD of main group materials

Solution based CVD of main group materials

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Aerosols: A Sustainable Route to Functional Materials

Contact Info

Product

Resources

About