2010
DOI: 10.1117/12.849305
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The QWIP focal plane assembly for NASA's Landsat Data Continuity Mission

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Cited by 14 publications
(14 citation statements)
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“…The value of g can be improved by adopting higher doping density, thicker detector material, and possibly AR-coating. Nevertheless, the present g is within the same range as that observed in some commercial QWIP FPAs, and the calculated lineshape is in agreement with a grating-QWIP coupled to a broadband detector material [2] and explains the narrow 8-9 lm lineshape of typical QWIP FPAs with 25 lm pixel pitch. The agreements obtained in the PR-QWIP and the grating-QWIP cases thus lend experimental support to the present EM field simulation.…”
Section: C-qwips With Thin Substratesupporting
confidence: 84%
See 1 more Smart Citation
“…The value of g can be improved by adopting higher doping density, thicker detector material, and possibly AR-coating. Nevertheless, the present g is within the same range as that observed in some commercial QWIP FPAs, and the calculated lineshape is in agreement with a grating-QWIP coupled to a broadband detector material [2] and explains the narrow 8-9 lm lineshape of typical QWIP FPAs with 25 lm pixel pitch. The agreements obtained in the PR-QWIP and the grating-QWIP cases thus lend experimental support to the present EM field simulation.…”
Section: C-qwips With Thin Substratesupporting
confidence: 84%
“…In this section, we apply the classical geometric-optical (GO) C-QWIP model [1] to one of the FPAs developed for a thermal infrared sensor (TIRS) instrument [2]. To predict the external quantum efficiency g of a C-QWIP FPA, the absorption coefficient a(k) of the QWIP material is first calculated for parallel propagating light with a proper polarization.…”
Section: Tirs5 Fpamentioning
confidence: 99%
“…All three entities worked on modelling and defining the superlattice growth recipe. The thickness of the gallium arsenide (GaAs) quantum wells and the aluminum gallium arsenide (AlGaAs) barrier layers and the concentration of aluminum in the AlGaAs primarily determine the band structure in the wells and, hence, the spectral response of the detector material [13,14]. This design was provided to a fabrication house, which deposited 20 alternating layers of GaAs quantum wells and AlGaAs barriers using molecular beam epitaxy (MBE).…”
Section: Focal Planementioning
confidence: 99%
“…The values of f n are obtained after solving the eigen energies and eigen functions of the structure. The C-QWIP pixel geometry reflects the normally incident light into parallel propagation, with which η is given by ( (2) In Eqn. (2), t s is the substrate transmission, f p is the pixel fill factor, η int is the internal quantum efficiency, κ is a factor proportional to the thickness of the active layer inside a corrugation, p is the pixel linear dimension, t is the corrugation height, and γ(V) is the transmission coefficient of a photoelectron traveling out of the quantum well at a bias V. The resulting photocurrent J p generated within a C-QWIP pixel will then be…”
Section: Tirs5 Fpamentioning
confidence: 99%
“…In this section, we will apply the existing C-QWIP model [1] to one of the FPAs developed for TIRS instrument [2]. To predict the external quantum efficiency η of a C-QWIP FPA, the absorption coefficient α(λ) of the QWIP material is first calculated for parallel propagating light with a proper polarization.…”
Section: Tirs5 Fpamentioning
confidence: 99%