C-QWIPs for space exploration

Choi, K. K.; Jhabvala, M.; Forrai, D. P.; Sun, Jason; Endres, D.

doi:10.1016/j.infrared.2010.12.006

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…The development of highly uniform, large-area epitaxial growth methods such as molecular beam epitaxy (MBE) and metal-organic vapor-phase epitaxy (MOVPE) enables large-scale fabrication of RTDs, QCLs, and QWIPs. The remarkable development of large-area QWIP focal plane arrays (FPAs) by NASA's Goddard Space Flight Center demonstrates the technological advantage offered by this low-cost, highly reproducible imaging device for applications such as long-wavelength FPAs for the NASA Landsat surveillance missions [16,17]. Conventional GaAsbased devices are fundamentally limited to operation wavelengths not much shorter than ~ 6 µm due to a maximum usable direct gap conduction band offsets (CBOs) of around 0.34 eV [18].…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Lyman

Krishnamoorthy

2020

Journal of Applied Physics

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We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3) quantum well system. Conventional material systems have matured into successful intersubband device applications such as large area quantum well infrared photodetector (QWIP) focal plane arrays for reproducible imaging systems but are fundamentally limited via maximum conduction band offsets to mid-and long-wavelength infrared applications. Short-and near-infrared devices are technologically important to optical communications systems and biomedical imaging applications, but are difficult to realize in intersubband designs for this reason. In this work, we use a first-principles approach to estimate the expansive design space of monoclinic β-(AlxGa1x)2O3/Ga2O3 material system, which reaches from short-wavelength infrared (1-3 µm) to far infrared (>30 µm) transition wavelengths. We estimate the performance metrics of two QWIPs operating in the long-and short-wavelength regimes, including an estimation of high roomtemperature detectivity (~ 10 11 Jones) at the optical communication wavelength λp = 1.55 µm.Our findings demonstrate the potential of the rapidly maturing (AlxGa1-x)2O3/Ga2O3 material system to open the door for intersubband device applications.

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Section: Introductionmentioning

confidence: 99%

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Lyman

Krishnamoorthy

2020

Journal of Applied Physics

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“…In the last two decades, owing to progress in crystal growth, photolithography, and semiconductor etching, there has been significant progress in the quantum well infrared photo-detector (QWIP) technology leading to large format focal plane arrays [1][2][3][4][5][6]. According to the selection rule of quantum well inter-subband transition, the optical coupling structures must be incorporated to enable QWIP absorption of normally incident light.…”

Section: Introductionmentioning

confidence: 99%

Coupling Efficiency Analysis of Different Top Coupling Grating for Quantum Well Infrared Photo-Detector

Yang

Wang

2013

AMM

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The relative coupling efficiency of different top coupling grating for quantum well infrared photo-detector is calculated by finite difference time domain algorithms. The relative coupling efficiency respect to the grating parameters, such as, grating period and grating depth is analyzed for both square lattice and hexagonal lattice structure gratings. By comparison, it can be concluded that the optimization grating parameters is differential for different grating structure.

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“…In the last two decades, owing to progress in crystal growth, photolithography, and semiconductor etching, there has been significant progress in the quantum well infrared photodetector (QWIP) technology leading to large format focal plane arrays [1][2][3][4][5][6]. According to the selection rule of quantum well inter-subband transition, the optical coupling structures must be incorporated to enable QWIP absorption of normally incident light.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Trapezoid Coupling Grating for Long-Wave Quantum Well Infrared Photodetector

Wang

Yang

Wang

et al. 2012

AMR

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The relative coupling efficiency of trapezoid coupling grating for long-wave quantum well infrared photodetector is calculated by finite difference time domain algorthms. By considering the lateral etching effects in grating fabrication, the relative coupling efficiency with respect to the grating parameters, such as, grating period, grating depth, grating top width and grating bottom width etc, is computed. The calculated results show that the relative coupling efficiency will reach the largest value for the 8.266µm incident infrared light when taking grating period asp=2.55 µm, grating depth as h=0.622 µm , grating top width as d1=1.253µm , grating bottom width as d2=0.626µm , duty ratio as q=0.5 and the ratio of bottom width and top width as α=0.5.

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C-QWIPs for space exploration

Cited by 4 publications

References 5 publications

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Coupling Efficiency Analysis of Different Top Coupling Grating for Quantum Well Infrared Photo-Detector

Optimization of Trapezoid Coupling Grating for Long-Wave Quantum Well Infrared Photodetector

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