The preparation and properties of vapor-grown In1−xGax P

Nuese, C. J.; Richman, D.; Clough, R. B.

doi:10.1007/bf02662737

Cited by 49 publications

(10 citation statements)

References 14 publications

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“…6. [1], in closer agreement to the quadratic dependence noted by Lorenz and Onton (3). For values of x greater than about 0.6, the peak energy tends to fall below the value given by Eq.…”

Section: Spectral Characteristicssupporting

confidence: 91%

“…The performance of the junctions prepared by either technique was poor in the early vapor-grown material (1), as evidenced by low quantum efficiencies of 10 -5-10 -6 and large infrared contributions to the electroluminescence spectra. The performance of the junctions prepared by either technique was poor in the early vapor-grown material (1), as evidenced by low quantum efficiencies of 10 -5-10 -6 and large infrared contributions to the electroluminescence spectra.…”

mentioning

confidence: 99%

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Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Nuese¹,

Sigai

Abrahams³

et al. 1973

J. Electrochem. Soc.

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Inl-xGaxP epitaxial layers, prepared by an improved vapor-phase growth technique, have been evaluated by photoluminescence measurements and by transmission electron microscopy. Maximum photoluminescence intensities for So-and Zn-doped Inl-xGa~P layers (0.5 < x <~ 0.6), are observed at carrier concentrations of 1 • 1017 and 3 • 10 TM cm -3, respectively. At higher concentrations, a severe degradation in the photoluminescence intensity occurs, concurrent with the appearance (by TEM) of precipitates in concentrations of about 1014 cm -a. For Zn-doped Inl-xGa~P, the precipitate has been identified as ZnsPz from its electron diffraction pattern. The luminescence spectra from the vapor-grown layers at 300~ consist of a high-energy peak, attributed to band-to-band recombination, and a low-energy peak, located 0.4 to 0.5 eV less than bandgap. The low-energy peak increases with Se donor concentration and with alloy composition, x, but is typically orders of magnitude less intense than the bandgap peak. Electroluminescent p-n junctions prepared with optimum donor and acceptor concentrations have yielded external quantum efficiencies between 5 and 10 • 10 -4 (unencapsulated) for emission between 6150 and 6600A. From such junctions, laser diodes have been fabricated which emit orange coherent radiation between 6105 and 6150A with threshold currents as low as 4000 A/cm ~ (at 77~ ~This estimate assumes a minority carrier diffusion length of 1 /zrn and a forward voltage of 2V. 956) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.198.30.43 Downloaded on 2015-02-18 to IP

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“…6. [1], in closer agreement to the quadratic dependence noted by Lorenz and Onton (3). For values of x greater than about 0.6, the peak energy tends to fall below the value given by Eq.…”

Section: Spectral Characteristicssupporting

confidence: 91%

mentioning

confidence: 99%

Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Nuese¹,

Sigai

Abrahams³

et al. 1973

J. Electrochem. Soc.

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“…The values of the heterogeneous-reaction constants are subject to considerable fluctuations. Since a critical analysis of the existing thermochemical data is beyond the scope of this work, we have used the values which allow for a fairly good agreement with the well-established experimental data relative to InGaAs [17], InGaP [18], GaAsP [19] and InAsP [20], used simultaneously. The comparison between these data and those obtained by solving the above system is shown in figures 1 and 2.…”

mentioning

confidence: 99%

Equilibrium calculations for VPE-InGaAsP

Franchi¹,

Pelosi²,

Attolini³

1981

Rev. Phys. Appl. (Paris)

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2014 L'équilibre hétérogène du système InGaAsP/HCl/H2 a été étudié dans un domaine de température et de pression caractéristiques de l'épitaxie en phase vapeur (EPV) par la méthode des hydrures. Les prévisions théoriques sont comparées aux données expérimentales pour la croissance d'alliages GaInAsP ayant la même maille cristalline que le substrat InP. Les résultats présentés sont en bon accord avec quelques données expérimentales. Quelques cas de désaccord entre résultats thermodynamiques et résultats expérimentaux ou entre différentes valeurs expérimentales sont également discutés. Abstract. 2014 The heterogeneous equilibrium in the InGaAsP/HCl/H2 system has been studied at pressure and temperature conditions pertaining to the hydride-VPE growth. The results have been compared with the available experimental data on the growth of the above quaternary alloys lattice-matched to InP. A remarkably good agreement has been achieved with some existing data. Possible causes of discrepancies both between equilibrium and experimental results and between different experimental findings have been briefly discussed.

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“…Device performance is highly dependent on the growth of a spatially uniform In1-xGaxP layer at the latticematched composition (x = 0.52) in order to prevent the strain induced nucleation of dislocations which can degrade device performance. The solid composition of an HVPE In1-xGaxP layer is particularly sensitive to the InCl:GaCl ratio in the gas phase above the substrate and also substrate temperature [16,17], making In1-xGaxP an effective test platform of the modeled spatial uniformity.…”

Section: A Spatial Reactant Uniformity At the Substrate Surfacementioning

confidence: 99%

“…In addition to In/Ga ratio in the gas phase, substrate temperature also strongly affects the composition of HVPE-grown In1-xGaxP. Indium incorporation in the film decreases with temperature [16] due to the fact that the formation energy for GaP is lower (more negative) than for InP [18]. Under typical growth conditions, the GaP incorporation reaction is always driven to near completion while temperature varation alters the extent of the InP reaction, decreasing it with increasing temperature because the reaction is exothermic.…”

Section: A Spatial Reactant Uniformity At the Substrate Surfacementioning

confidence: 99%

Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor

Schulte

Simon

Roy³

et al. 2016

Journal of Crystal Growth

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We report the development of a computational fluid dynamics (CFD) model of a dual chamber hydride vapor phase epitaxial (HVPE) growth reactor. Uniformity of reactant concentrations in the growth stream, transient reactor flows, and cross doping between the two growth chambers, all factors critical to the deposition of uniform, low defect semiconductor layers, were modeled. Simulation results were generated by solving the fundamental continuity, momentum and energy equations over a discretized reactor volume by a finite volume analysis with the aid of CFD-ACE+ commercial software. We demonstrated uniformity of the vapor composition within ±1% across the substrate, achieved due to specific features of the reactor design. Small compositional non-uniformity (±2% absolute) in In1-xGaxP layers grown in our reactor was correlated with calculated temperature non-uniformity across the subsrate. Gas switching was modeled and the transient time predicted by the model was confirmed by measurement of doping transients in a sample grown in the reactor. Lastly the gas curtains that chemically isolate the reactor chambers were modeled and the results were compared to experimental data for cross doping between the chambers. As an example, we demonstrate, based on insight from the model, that our HVPE reactor is suitable for the deposition of GaAs PV devices. CFD modeling is a critical tool for the scale up of laboratory level processes to industrial levels.

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The preparation and properties of vapor-grown In1−xGax P

Cited by 49 publications

References 14 publications

Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Equilibrium calculations for VPE-InGaAsP

Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor

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