Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Abstract

Inl-xGaxP epitaxial layers, prepared by an improved vapor-phase growth technique, have been evaluated by photoluminescence measurements and by transmission electron microscopy. Maximum photoluminescence intensities for So-and Zn-doped Inl-xGa~P layers (0.5 < x <~ 0.6), are observed at carrier concentrations of 1 • 1017 and 3 • 10 TM cm -3, respectively. At higher concentrations, a severe degradation in the photoluminescence intensity occurs, concurrent with the appearance (by TEM) of precipitates in concentrations of about 1014 cm -a. For Zn-doped Inl-xGa~P, the precipitate has been identified as ZnsPz from its electron diffraction pattern. The luminescence spectra from the vapor-grown layers at 300~ consist of a high-energy peak, attributed to band-to-band recombination, and a low-energy peak, located 0.4 to 0.5 eV less than bandgap. The low-energy peak increases with Se donor concentration and with alloy composition, x, but is typically orders of magnitude less intense than the bandgap peak. Electroluminescent p-n junctions prepared with optimum donor and acceptor concentrations have yielded external quantum efficiencies between 5 and 10 • 10 -4 (unencapsulated) for emission between 6150 and 6600A. From such junctions, laser diodes have been fabricated which emit orange coherent radiation between 6105 and 6150A with threshold currents as low as 4000 A/cm ~ (at 77~ ~This estimate assumes a minority carrier diffusion length of 1 /zrn and a forward voltage of 2V. 956) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.198.30.43 Downloaded on 2015-02-18 to IP

Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System

“…It is a common practice in III–As/P planar light-emitting diode structures to use GaInP as the active layer. − By introducing Al in GaInP, the bandgap can be increased all the way to 2.52 eV in AlP but which has an indirect bandgap . The Al/Ga ratio in lattice-matched AlGaInP can be tuned to be used as electron blocking layer keeping the (AlGa)/In ratio constant because the lattice constant changes only slightly with increasing Al due to similar lattice constants for AlP and GaP. , In planar structures, LEDs based on the AlGaInP material system are often grown on GaAs substrates, since (Al x Ga 1– x ) 0.51 In 0.49 P is lattice-matched to GaAs .…”

Luminescence Characterization of In0.12Ga0.88As0.34 P 0.66 Grown on GaAs0.61 P 0.39 Substrates by Liquid‐Phase Epitaxy

“…When the electron concentration is above 7 • 10 ~7 cm -;, the PL relative intensity starts to fall off and may possibly be as a result of the formation of inactive complexes or precipitates. 21 The FWHM value increases from 46 to 71 meV, which is larger than that of 40 meV for the undoped InGaAsP layer, as the electron concentration increases from 1.8 • 10 ~7 to 3.4 • 1018 cm -3.…”

Developments in Luminescence and Display Materials Over the Last 100 Years as Reflected in Electrochemical Society Publications [Journal of the Electrochemical Society, 149, S69 (2002)]

“…In 1973, Nuese et al 122 described the vapor growth of In 1Ϫx Ga x P for P-N junction electroluminescence. From such junctions, laser diodes have been fabricated which emit orange coherent radiation between 6105 and 6150 Å. Saitoh and Minagawa 123 communicated on the epitaxial growth and characterization of GaAs 1Ϫx P x and its use for electroluminescent diodes fabricated by diffusing zinc into GaAs 0.4 P 0.6 layers.…”