2015
DOI: 10.1021/acs.nanolett.5b04401
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Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System

Abstract: Vainorius, N. (2016). Radial nanowire lightemitting diodes in the (AlxGa1-x)yIn1-yP material system. Abstract from 18th International Conference on Crystal Growth and Epitaxy, Nagoya, Japan.

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Cited by 38 publications
(49 citation statements)
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“…This flexibility in NW design and growth has enabled novel device applications including NW lasers 10,22,23 , light emitting and detection devices 2,[24][25][26] , ultrahigh density transistors 27 single-electron charging devices 28,29 as well as single photon emitters 15,30,31 and detectors 32 .…”
Section: Introductionmentioning
confidence: 99%
“…This flexibility in NW design and growth has enabled novel device applications including NW lasers 10,22,23 , light emitting and detection devices 2,[24][25][26] , ultrahigh density transistors 27 single-electron charging devices 28,29 as well as single photon emitters 15,30,31 and detectors 32 .…”
Section: Introductionmentioning
confidence: 99%
“…11,12) In this study, we report the growth and characterization of WZ InP/AlGaP CMS NWs with QW structures for the green color spectrum. The WZ AlGaP at an Al composition of around 20% is expected to have the band gap energy in the green spectral region according to calculations of their band structures.…”
mentioning
confidence: 99%
“…Berg and co-workers have shown the potential of AlGaInP based nanowire system as a precursor for next-generation light-emitting diodes as indicated by the electro-optical properties measured by injection luminescence measurements [33]. In a similar line, Cheng et al, have achieved atomically thin transition metal dichalcogenides p-n diodes with distinct layer-number dependent emission characteristics to produce a highest external quantum efficiency up to 12% [34].…”
Section: Electro Chemo Iuminescent Nanoparticlesmentioning
confidence: 96%