Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

Wägner, Hans; Kaveh, Masoud; Gao, Qian; Tan, Hark Hoe; Jagadish, Chennupati; Langbein, Wolfgang Werner

doi:10.1103/physrevb.95.045305

Cited by 7 publications

(5 citation statements)

References 67 publications

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“…As shown in Figure 4a, PO x /Al 2 O 3 passivation resulted in a significantly longer PL decay, evidencing an enhanced carrier lifetime due to reduced surface recombination. As observed previously for InP nanowires, 54,55 this decay is nonexponential. We therefore choose to take the time constant characteristic of the initial, most rapid portion of the TRPL decay, which we designate τ min , as a conservative measure of the excess carrier lifetime at the peak injection level of the measurement.…”

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confidence: 85%

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al₂O₃ with PO_x Interlayer

et al. 2017

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III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm–2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells.

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confidence: 85%

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al₂O₃ with PO_x Interlayer

et al. 2017

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“…The two initial distributions of quasi-Bloch vectors given in Equations ( 17) and (20) are depicted in Figure 9 in blue and violet, respectively. We vividly see the Lissajous curves leading to the distributions in ñ-direction.…”

Section: Six-wave Mixing Quasi-bloch Vectormentioning

confidence: 99%

“…[ 8 ] First demonstrations were performed on ruby crystals, [ 8 , 9 ] but the photon echo spectroscopy also has a long standing history in semiconductor optics. It has been used to study different types of exciton dynamics, ranging from exciton‐exciton scattering [ 10 , 11 , 12 , 13 ] to exciton‐phonon coupling, [ 14 , 15 ] and it has been applied to 3D bulk, [ 10 , 16 , 17 ] 2D quantum well, [ 18 , 19 ] 1D nanowire, [ 20 ] and 0D quantum dot structures. [ 21 , 22 , 23 , 24 ] However, the technique is not restricted to solid state samples; it has also been applied to liquids.…”

Section: Introductionmentioning

confidence: 99%

Destructive Photon Echo Formation in Six‐Wave Mixing Signals of a MoSe₂Monolayer

et al. 2021

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Monolayers of transition metal dichalcogenides display a strong excitonic optical response. Additionally encapsulating the monolayer with hexagonal boron nitride allows to reach the limit of a purely homogeneously broadened exciton system. On such a MoSe 2 -based system, ultrafast six-wave mixing spectroscopy is performed and a novel destructive photon echo effect is found. This process manifests as a characteristic depression of the nonlinear signal dynamics when scanning the delay between the applied laser pulses. By theoretically describing the process within a local field model, an excellent agreement with the experiment is reached. An effective Bloch vector representation is developed and thereby it is demonstrated that the destructive photon echo stems from a destructive interference of successive repetitions of the heterodyning experiment.

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“…First demonstrations were performed on ruby crystals [8,9], but the photon echo spectroscopy also has a long standing history in semiconductor optics. It has been used to study different types of exciton dynamics, ranging from exciton-exciton scattering [10,11,12,13] to exciton-phonon coupling [14,15], and it has been applied to three dimensional bulk [10,16,17], two dimensional quantum well [18,19], one dimensional nanowire [20], and zero dimensional quantum dot structures [21,22,23,24]. However, the technique is not restricted to solid state samples; it has also been applied to liquids [25,26,27].…”

Section: Introductionmentioning

confidence: 99%

Destructive photon echo formation in six-wave mixing signals of a MoSe$_2$ monolayer

Hahn,

Vaclavkova,

Bartos

et al. 2021

Preprint

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Monolayers of transition metal dichalcogenides display a strong excitonic optical response. Additionally encapsulating the monolayer with hexagonal boron nitride allows to reach the limit of a purely homogeneously broadened exciton system. On such a MoSe 2 -based system we perform ultrafast six-wave mixing spectroscopy and find a novel destructive photon echo effect. This process manifests as a characteristic depression of the nonlinear signal dynamics when scanning the delay between the applied laser pulses. By theoretically describing the process within a local field model we reach an excellent agreement with the experiment. We develop an effective Bloch vector representation and thereby demonstrate that the destructive photon echo stems from a destructive interference of successive repetitions of the heterodyning experiment.

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Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

Abstract: Abstract:We investigated the dephasing and population dynamics of electron-hole (e-h) pairs and excitons

Cited by 7 publications

References 67 publications

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al₂O₃ with PO_x Interlayer

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al₂O₃ with PO_x Interlayer

Destructive Photon Echo Formation in Six‐Wave Mixing Signals of a MoSe₂Monolayer

Destructive photon echo formation in six-wave mixing signals of a MoSe$_2$ monolayer

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Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

Abstract: Abstract:We investigated the dephasing and population dynamics of electron-hole (e-h) pairs and excitons

Cited by 7 publications

References 67 publications

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

Destructive Photon Echo Formation in Six‐Wave Mixing Signals of a MoSe2Monolayer

Destructive photon echo formation in six-wave mixing signals of a MoSe$_2$ monolayer

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Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al₂O₃ with PO_x Interlayer

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al₂O₃ with PO_x Interlayer

Destructive Photon Echo Formation in Six‐Wave Mixing Signals of a MoSe₂Monolayer