The power conversion efficiency of visible light emitting devices in standard BiCMOS processes

Kuindersma, P.I.; Hoang, Tù; Schmitz, Jurriaan; Vijayaraghavan, M. N.; Dijkstra, Marcel; Noort, Wibo van; Vanhoucke, T.; Peters, W.C.M.; Krämer, M.C.J.C.M.

doi:10.1109/group4.2008.4638164

Cited by 9 publications

(8 citation statements)

References 4 publications

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“…We vary V BR by geometric scaling of the LED, resulting in a trapezoidal field-profile F(x) for a fixed doping level N determined by the technology. Results are compared with the models of [10] and [11]. We show that our model [10] is in a good agreement with our new experimental data.…”

Section: Introductionsupporting

confidence: 71%

“…Thus, maximizing the optical power efficiency η, defined as the ratio of the optical power P opt to the electrical power P LED , is highly desired. The existence of an optimum V BR ∼ 5 V at which η is maximum was reported earlier [11], based on devices in a BiCMOS process, where measured values of η were fitted with an empirical model. However, the underlying physical mechanism was not explained.…”

Section: Introductionmentioning

confidence: 52%

“…Here the optical intensity was related to the field-dependent electron temperature (T e ) profile, where an optimal V BR ∼ 5 V was also theoretically predicted, using a non-local avalanche model [10], [12]- [14]. In addition, there was a lack of enough experimental variation in V BR , especially at low voltages, to verify both models proposed in [10] and [11].…”

Section: Introductionmentioning

confidence: 88%

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Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS

Dutta

Wienk

Hueting

et al. 2017

IEEE Electron Device Lett.

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We report on the dependency of the optical power efficiency η on the breakdown voltage V BR of avalanche-mode (AM) light-emitting diodes (LEDs) in silicon. Lateral p + -n-n + LEDs have been designed in a 65-nm bulk CMOS technology, where V BR is varied between 2 and 9 V. This tunes both the magnitude and the spatial distribution of the reverse electric field, which governs AM electroluminescence. Experiments show that a maximum η of ∼1.7 × 10 −6 is obtained for V BR ∼ 6 V. For V BR < 6 V, non-local avalanche results in a lower η, while for V BR > 6 V, a gradual reduction in η with increasing V BR is obtained. This trend is compared with two recently proposed opto-electronic models. A maximum in η at relatively low voltages is attractive for monolithic opto-electronic integration in silicon.

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Section: Introductionsupporting

confidence: 71%

Section: Introductionmentioning

confidence: 52%

Section: Introductionmentioning

confidence: 88%

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Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS

Dutta

Wienk

Hueting

et al. 2017

IEEE Electron Device Lett.

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“…Clear photovoltaic properties such as a short-circuit current of 0.588 ± 0.021 mA, an open-circuit voltage of 0.623 ± 0.001 V, and a conversion efficiency of 12.5% were extracted. On the other hand, a quantum efficiency of 57.2% was also calculated according to (3) [25].…”

Section: B Photovoltaic Currentsmentioning

confidence: 99%

Comprehensive Studies of High-Linearity Position-Sensitivity Detectors With Theoretical Consideration on Lateral Photovoltaic Currents

Huang

et al. 2020

IEEE J. Electron Devices Soc.

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Detective properties of a GaAs-based position sensitive detector (PSD) employing a very thin, highly doped p +-GaAs layer as a resistive layer were investigated. In addition to photovoltaic voltages, photovoltaic currents from a three-terminal PSD with two lateral electrodes and one transverse common electrode were also studied. In particular, lateral photovoltaic currents flowing into the two lateral electrodes and/or their differential values, instead of transverse photovoltaic currents were used as output signals. To do so, a PSD itself without power supply was proposed to realize its suitability for applications. When a 2 mW 638 nm light spot was used as an input, a position sensitivity of 38.5 µA/mm, a correlation coefficient (or linearity) of > 0.999, and a nonlinearity (or position error) of 1.25% were obtained for our GaAs-based PSD with a long distance of 14 mm between two lateral electrodes. Besides, an equivalent circuit with a point solar cell was proposed to successfully explain these photovoltaic currents found in various configured 2-terminal and 3-terminal PSDs.

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“…The power conversion efficiency is defined as the ratio of the output optical power to the input electrical power [28], [30], [31]:…”

Section: Optical Power Measurement and Analysismentioning

confidence: 99%

An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic

et al. 2019

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A forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like tip were designed to enhance the intensity of electric field. When the Si-LED works at high forward current, the output optical power increases rapidly with the increase of forward current, which is a non-linear growth similar to exponential. To the best of our knowledge, such a phenomenon has never been reported before. Moreover, when the forward current is at 200 mA, the optical power density reaches 32.7 nW•μm 2 , which is two or three orders higher than that of other ever reported forward-biased Si-LED fabricated by standard CMOS technology. In addition, the red shift of the main peak in the spectra of Si-LED was observed and analyzed, and also the light-emission mechanism of each peak in the spectra was given.

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The power conversion efficiency of visible light emitting devices in standard BiCMOS processes

Abstract: We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.

Cited by 9 publications

References 4 publications

Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS

Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS

Comprehensive Studies of High-Linearity Position-Sensitivity Detectors With Theoretical Consideration on Lateral Photovoltaic Currents

An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic

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