The Platinum Group Metals in Electronics

Gurney, P.D.; Seymour, R. J.

doi:10.1016/b978-0-444-88189-2.50022-5

Cited by 6 publications

(4 citation statements)

References 103 publications

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“…Thin films of palladium have important applications as electrical contacts (replacing gold), multilayer magnetooptical data storage materials, gas or infrared sensors, multilayer chip capacitors, electrode coating materials, catalysts, and membrane materials for either catalysis or gas separation . At present, physical vapor deposition (PVD) techniques, such as vacuum sputtering, and electroplating are used in industry to prepare palladium films.…”

Section: Introductionmentioning

confidence: 99%

“…At present, physical vapor deposition (PVD) techniques, such as vacuum sputtering, and electroplating are used in industry to prepare palladium films. These techniques are certainly effective but, as line-of-sight methods, they can suffer from shadow effects when used to coat uneven substrates, so there has been much interest in developing chemical vapor deposition (CVD) techniques for palladium thin films . The known precursors for palladium include [Pd(η 3 -allyl) 2 ] and derivatives such as [Pd(η 3 -CH 2 CHCHMe) 2 ], which has a low melting point of 20−23 °C with decomposition; these are excellent precursors for high-purity palladium thin films by thermal CVD, but they have low thermal stability and are sensitive to both oxygen and water so are not easily stored or handled .…”

Section: Introductionmentioning

confidence: 99%

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Allyl(β-diketonato)palladium(II) Complexes, Including Liquid Precursors, for Chemical Vapor Deposition of Palladium

1998

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The synthesis, characterization, and application as chemical vapor deposition (CVD) precursors of several new complexes of the type η3-allyl(β-diketonato)palladium(II) are reported. Some of these include the first liquid precursors for CVD of thin films of pure palladium. The CVD can be conducted at 170−315 °C, and the purest films are obtained using oxygen as the carrier gas, either at atmospheric pressure or under partial vacuum. Some observations with respect to the mechanism of the CVD process are also described.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Allyl(β-diketonato)palladium(II) Complexes, Including Liquid Precursors, for Chemical Vapor Deposition of Palladium

1998

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“…A number of magnetic materials have been suggested in recent years for use in magnetooptical (MO) memory for the storage of digital information …”

Section: Introductionmentioning

confidence: 99%

“…However, such alloys suffer from several deficiencies, most notably from the easy oxidation of the rare-earth metal components with consequent loss of the magnetic properties required in recording . Recently, perpendicular magnetic anisotropy in Co/Pd and Co/Pt multilayer films has been revealed and studied extensively. 1b,d,e Cobalt, palladium, and platinum are much more resistant to oxidation by air and unprotected metal bilayered structures stored under ambient conditions for several months undergo neither oxidation nor corrosion, and the magnetic and MO data remain unchanged …”

Section: Introductionmentioning

confidence: 99%

Cobalt−Palladium and Cobalt−Platinum Bilayer Films Formed by Chemical Vapor Deposition

Choi

Puddephatt

1997

Chem. Mater.

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The complexes [Co 3 (CO) 9 CCl], [Co 3 (CO) 9 CH], [Co 2 (CO) 6 (HCtCPh)] and [Co 2 (CO) 6 (HCtC t -Bu)] are shown to be excellent precursors for CVD of pure cobalt films, when using hydrogen as carrier gas. These compounds all possess good air and moisture stability, have high volatility, and are easy to prepare, store, and handle. Using these precursors and the known palladium and platinum precursors [Pd(hfac) 2 ] and [PtMe 2 (COD)], it has been shown that bilayer films glass/Co/Pd, glass/Pd/Co, glass/Co/Pt, and glass/Pt/Co can be grown easily. There is a sharp boundary and good adhesion between the two metal layers, suggesting that this method may be suitable for the formation of bilayer films for magnetooptical applications.

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Deposition of Palladium from a Cylcopentadienyl‐allyl‐palladium Precursor on Si‐Based Substrates with Various Pretreatments: The Role of Surface Si–OH and Si‐H Species Studied by X‐Ray Photoelectron Spectroscopy

Wu¹,

Gunia²,

Strunskus³

et al. 2005

Chemical Vapor Deposition

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The decomposition reactions of a metal-organic precursor for the CVD of Pd, (Cp)Pd(allyl), on Si substrates with various terminated surfaces have been studied using X-ray photoelectron spectroscopy (XPS). The XPS data show that mixed hydrogen/ hydroxyl-terminated Si surfaces exhibit the highest activity ascribed to acidic Si-OH groups for precursor decomposition, followed by the as-received Si surface. Clean, well-defined SiO 2 surfaces prepared in ultrahigh vacuum (UHV) exhibit the lowest activity for the Pd precursor decomposition, whereas the hydrogen-terminated Si surface was rather active. Scanning electron microscopy (SEM) images show that Pd clusters were formed on the mixed hydrogen/hydroxyl-terminated Si surface with a coverage of about 10 %. The average size of the Pd clusters is about 30 nm. Based on the XPS experimental data, a hydrogenassisted decomposition mechanism of the Pd precursor is proposed.

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The Platinum Group Metals in Electronics

Cited by 6 publications

References 103 publications

Allyl(β-diketonato)palladium(II) Complexes, Including Liquid Precursors, for Chemical Vapor Deposition of Palladium

Allyl(β-diketonato)palladium(II) Complexes, Including Liquid Precursors, for Chemical Vapor Deposition of Palladium

Cobalt−Palladium and Cobalt−Platinum Bilayer Films Formed by Chemical Vapor Deposition

Deposition of Palladium from a Cylcopentadienyl‐allyl‐palladium Precursor on Si‐Based Substrates with Various Pretreatments: The Role of Surface Si–OH and Si‐H Species Studied by X‐Ray Photoelectron Spectroscopy

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