Abstract:The complexes [Co 3 (CO) 9 CCl], [Co 3 (CO) 9 CH], [Co 2 (CO) 6 (HCtCPh)] and [Co 2 (CO) 6 (HCtC t -Bu)] are shown to be excellent precursors for CVD of pure cobalt films, when using hydrogen as carrier gas. These compounds all possess good air and moisture stability, have high volatility, and are easy to prepare, store, and handle. Using these precursors and the known palladium and platinum precursors [Pd(hfac) 2 ] and [PtMe 2 (COD)], it has been shown that bilayer films glass/Co/Pd, glass/Pd/Co, glass/Co/P… Show more
“…Electrocatalyst Films thickness was estimated by cross-sectional SEM (micrographs not shown) and was about 180-250 nm, in accordance with other films reported elsewhere [24,25]. Fig.…”
Section: Xrd Sem and Tem Analysissupporting
confidence: 85%
“…The films oxygen content (as confirmed later by EDAX) is due to the fact that film top surface is oxidized by air. Oxygen content can vary through film thickness [24,25]. Fig.…”
“…Electrocatalyst Films thickness was estimated by cross-sectional SEM (micrographs not shown) and was about 180-250 nm, in accordance with other films reported elsewhere [24,25]. Fig.…”
Section: Xrd Sem and Tem Analysissupporting
confidence: 85%
“…The films oxygen content (as confirmed later by EDAX) is due to the fact that film top surface is oxidized by air. Oxygen content can vary through film thickness [24,25]. Fig.…”
“…As expected, only Zn, O and C contributions are observed in the spectrum. Although it has been argued that the presence of phenyl rings in the precursors often introduces carbon impurities in MOCVD of other metals [28], the carbon detected on the surface of the as-deposited film is probably the result of contamination rather than an inefficient photolysis. After 60 s Ar + sputtering no carbon was detected on the film surface.…”
“…The high carbon content detected on the surface of the as-deposited films is probably the result of contamination rather than an inefficient photolysis. It has been argued that presence of phenyl rings in the precursors often introduces carbon impurities in MOCVD of other metals [30]. Other authors have found that the metal b-diketonates such as [Hf(aca) 4 ] require high substrate temperatures and can lead to carbon incorporation in MOCVD [31].…”
Section: Characterization Of Zirconium Oxide Thin Filmsmentioning
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