The performance limiting factors as RF MOSFETs scale down

40-GHz coplanar waveguide bandpass filters on silicon substrate

“…Good agreement between measured and simulated S , S , and bandwidth, shown in Fig. 3(a) and (b), are obtained at all frequencies in both cases that suggest the excellent accuracy of these models and can be used for the further parameter extraction [3], [6].…”

“…In contrast, the filter on conventional Si shows much worse S transmission loss of 10 dB at center frequency, which is 7-dB less than proton-implanted Si. This extra 7 dB loss in S is equivalent to the gain improvement by two generations of MOEFET scaling [6]. The poor S return loss also prohibits its usability for connecting to RF circuit or dual band application at both 20 and 40 GHz.…”

High-density MIM capacitors using AlTaOx dielectrics

“…Finally, Al metal was used for both top capacitor electrode and transmission line with 50 m 50 m capacitor area. The AlTaO MIM capacitors were characterized by HP4284A LCR meter from 10 KHz to 1 MHz and measured by parameters using an HP8510C network analyzer from 200 MHz to 30 GHz followed by standard deembedding from a dummy device [10]- [15]. Additionally, the transmission line with the same length without a capacitor is used for deembedding the parasitic transmission line related substrate loss [13], [14].…”

0.13 ?m Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

“…Although DC gate resistance can be minimized to a small value by reducing WF and increasing NF, or using low resistivity salicidation technology, a relatively large Rg cannot be recovered under RF operation. It's due to the non-quasistatic effect [6] originated from non-instantaneous turn-on of each gate finger subject to RF signal passing through the parallel gate line. The RF performance represented by S-parameters was measured using HP85 1 GB network analyzer from 200 MHz to 50 GHz.…”