The Oxides and Oxyacids of Tellurium

Dutton, W. A.; Cooper, W. Charles

doi:10.1021/cr60244a003

Cited by 64 publications

(24 citation statements)

References 58 publications

(97 reference statements)

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“…0.42 eV in the basal plane and 0.54 eV along the [OOl] direction, are typical of this region. Considering the relatively high enthalpy of sublimation for paratellurite of GO kcal/mol [5] (compared, for example, with 51.5 kcal/mol for NaCl), makes it seem unreasonable to propose that these observed activation energies include the energy of formation of an intrinsic defect. For the extrinsic dissociation region, we expect [19] that the pre-exponential A is given by:…”

Section: Discussionmentioning

confidence: 99%

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Electrical conduction in paratellurite (TeO2) crystals

Jain

Nowick

1981

Phys. Stat. Sol. (a)

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Electrical conduction measurements on TeO, single crystals are made both for orientations 11 and 1 t o the tetragonal symmetrp axis. Below N 400 "C, a single Arrhenius plot is obtained in each orientation, with activation energies Ell = 0.54 and E l = 0.42 eV. It is concluded that conductivity in this range is ionic, falling into the extrinsic dissociation range of behavior. Possibly, oxygenion vacancies are responsible. At high temperature the conductivity increases sharply due to reduction of the sample and the onset of electronic carriers.La conduction klkctrique de cristaux de TeO, a kt6 measuree dans les deux principales directions, 11 e t 1 S I'axe tetragonal de symmetrie. En-dessous de 400 "C e t dans les deux directions, nous obtenons deux courbes d'Arrhenius ayant respectivenient pour Bnergie d'activation El I = 0,54 e t E l = 0,42 eV. Nous en concluons que, dans cet intervalle de temperatures la conduction est caractbre ionique e t correspond it la region extrinsique dissoci6. Les lacunes d'oxyg8ne sont probablement les porteuses de charge. A haute tempkrature, la conductivite augmente considkrablemerit, ceci ktant dB A la rkduction du cristal qui s'accompagne de l'apparition d'6lectrons porteurs. l) New York, K.Y. 10027, USA. z,

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Section: Discussionmentioning

confidence: 99%

“…Tellurium dioxide (TeO,) among these, has special significance from a purely chemical point of view because of the borderline position of tellurium between metals and nonmetals. This is the most stable oxide of Te, melting a t 733 "C [5]. (The Te-TeO, phase diagram [6] does not show any observable non-stoichiometry in TeO,).…”

Section: Introductionmentioning

confidence: 99%

Electrical conduction in paratellurite (TeO2) crystals

Jain

Nowick

1981

Phys. Stat. Sol. (a)

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“…In the spectra, no significant chemical shift is visible between the EELS spectrum of pure bulk Te and of Te encapsulated in s-and l-CNTs. In addition to the EDX and EELS spectra, the chemical composition of the products is pure Te rather than Te oxide for the following three reasons: (i) Te was encapsulated in the CNTs under high vacuum conditions; (ii) the melting point of TeO 2 , which is the only tellurium oxide obtainable by the reaction between Te and air, is higher (∼1006 K [21]) than the encapsulation reaction temperature; and (iii) the transmission electron diffraction (TED) pattern shows that the residual Te shot remained as pure metal ( Figure S1, Supplementary data). Hereafter, the products obtained by encapsulation in s-CNT and l-CNTs are denoted as Te@s-CNTs and Te@l-CNTs, respectively.…”

Section: Methodsmentioning

confidence: 99%

Structural transition of tellurium encapsulated in confined one-dimensional nanospaces depending on the diameter

Kobayashi

Yasuda

2015

Chemical Physics Letters

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“…Dutton and Cooper (1966) have reviewed analytical work on the oxides and oxyacids of tellurium, and later Cooper (1971) published a treatise on the element Te and its unique chemistry.…”

Section: Physicochemical Parameters For CD and Te Electrodepositionmentioning

confidence: 99%

The periodic, electrochemical codeposition of cadmium and tellurium

Tobias

1987

AIChE Journal

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A mathematical model is presented for the codeposition of cadmium and tellurium onto a rotating‐disk electrode. The treatment incorporates the equation of convective diffusion for liquid phase mass transport, Butler‐Volmer expressions for charge‐transfer reactions, and a thermodynamic model for individual component activities in the solid state. Because of the formation of CdTe, a compound that has a large negative free energy of formation, the cadmium deposition reaction occurs at potentials substantially positive to its standard electrode potential (Uθ = −0.40 V). This reaction, along with the deposition of tellurium (Uθ = + 0.55 V), produces an electrodeposit that contains cadmium, tellurium, and cadmium telluride. The model can be used to calculate transient current‐potential relationships, ionic concentration profiles, and deposit compositions. Transport and kinetic parameters for cadmium and tellurium deposition are reported; a multidimensional optimization routine is used to evaluate physiochemical parameters from experimental data for the codeposition process.

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The Oxides and Oxyacids of Tellurium

Cited by 64 publications

References 58 publications

Electrical conduction in paratellurite (TeO2) crystals

Electrical conduction in paratellurite (TeO2) crystals

Structural transition of tellurium encapsulated in confined one-dimensional nanospaces depending on the diameter

The periodic, electrochemical codeposition of cadmium and tellurium

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