The origination and optimization of Si/SiO2 interface roughness and its effect on CMOS performance

Chen, Yuanning; Myricks, R.; Decker, Manuel; Liu, J.; Higashi, G. S.

doi:10.1109/led.2003.812545

Cited by 7 publications

(1 citation statement)

References 8 publications

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“…Physics and Technology of Nanostructured Materials V SiO2 is formed by wet chemical oxidation at a low temperature (T = 400 K) [20], the silicon surface at the SiO2/Si interface will degrade [19,21]. It is important to note that wet oxidation does not change the roughness of silicon surface at the SiO2/Si interface, the defects at the SiO2/Si interface being randomly distributed [19].…”

Section: Fig 2 Dependence Of Lpv On the Laser Spot Position For The F...mentioning

confidence: 99%

The Features of the Lateral Photovoltaic Effect in the Fe3O4/SiO2/n-Si Structure Depending on Silicon Substrate Orientation

Pisarenko

Коробцов

Балашев

et al. 2020

SSP

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We report on the results of a study of the lateral photovoltaic effect in theFe3O4/SiO2/n-Si structure grown on Si(001) and Si(111) substrates. It was found that in theFe3O4/SiO2/Si(001) structure the LPE sensitivity is a half times as much, and the photoresponseparameters are about 3 times less than those in the Fe3O4/SiO2/Si(111) structure. It is supposed thata higher sensitivity and faster photoresponse in the Fe3O4/SiO2/Si(001) structure, compared with theFe3O4/SiO2/Si(111) structure, are caused by a lower density of surface states at the SiO2/Si(001)interface than at the SiO2/Si(111) interface.

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Section: Fig 2 Dependence Of Lpv On the Laser Spot Position For The F...mentioning

confidence: 99%

The Features of the Lateral Photovoltaic Effect in the Fe3O4/SiO2/n-Si Structure Depending on Silicon Substrate Orientation

Pisarenko

Коробцов

Балашев

et al. 2020

SSP

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Controlled Topology of Block Copolymer Gate Insulators by Selective Etching of Cylindrical Microdomains in Pentacene Organic Thin Film Transistors

Sung

Park

et al. 2008

Adv Funct Materials

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We investigate the effect of surface topology of a block copolymer/neutral surface/SiO2 trilayered gate insulator on the properties of pentacene organic thin film transistor (OTFT) by the controlled etching of self assembled poly(styrene‐b‐methyl methacrylate) (PS‐b‐PMMA) block copolymer. The rms roughness of the uppermost block copolymer film directly in contact with pentacenes was systematically controlled from 0.27 nm to approximately 12.5 nm by the selective etching of cylindrical PMMA microdomains hexagonally packed and aligned perpendicular to SiO2 layer with 20 and 38 nm of diameter and periodicity, respectively. Both mobility and On/Off ratio were significantly reduced by more than 3 orders of magnitudes with the film roughness in OTFTs having 60 nm thick pentacene active layer. The poor device performance observed with the etched thin film of block copolymer dielectric is attributed to a defective pentacene active layer and the mixed crystalline structure consisting of thin film and bulk phase arising from the massive nucleation of pentacene preferentially at the edge of each cylindrical etched hole.

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Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors

Zhao

Yuan

Zhang

et al. 2022

Materials Science in Semiconductor Processing

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The origination and optimization of Si/SiO₂ interface roughness and its effect on CMOS performance

Cited by 7 publications

References 8 publications

The Features of the Lateral Photovoltaic Effect in the Fe<sub>3</sub>O<sub>4</sub>/SiO<sub>2</sub>/n-Si Structure Depending on Silicon Substrate Orientation

The Features of the Lateral Photovoltaic Effect in the Fe<sub>3</sub>O<sub>4</sub>/SiO<sub>2</sub>/n-Si Structure Depending on Silicon Substrate Orientation

Controlled Topology of Block Copolymer Gate Insulators by Selective Etching of Cylindrical Microdomains in Pentacene Organic Thin Film Transistors

Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors

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