The Features of the Lateral Photovoltaic Effect in the Fe₃O₄/SiO₂/n-Si Structure Depending on Silicon Substrate Orientation

Abstract

We report on the results of a study of the lateral photovoltaic effect in theFe3O4/SiO2/n-Si structure grown on Si(001) and Si(111) substrates. It was found that in theFe3O4/SiO2/Si(001) structure the LPE sensitivity is a half times as much, and the photoresponseparameters are about 3 times less than those in the Fe3O4/SiO2/Si(111) structure. It is supposed thata higher sensitivity and faster photoresponse in the Fe3O4/SiO2/Si(001) structure, compared with theFe3O4/SiO2/Si(111) structure, are caused by a lower density of surface states at the SiO2/Si(001)interface than at the SiO2/Si(111) interface.