The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

Al-Dharob, Mohammad Hussein; Kökçe, Ali; Aldemir, Durmuş Ali; Özdemir, Ahmet Faruk; Altındal, Ş.

doi:10.1016/j.jpcs.2020.109523

Cited by 32 publications

(5 citation statements)

References 61 publications

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“…This case is known as negative capacitance (NC) behavior in the literature and is mainly due to the minority carrier injection and contact injection. [11][12][13][14][15][16] This phenomenon may be also related to an inductive contribution to the impedance from the injection of minority carriers. 12 In addition, the negative capacitance effect is also explained by considering the loss of interface charge in occupied states below Fermi level.…”

Section: Resultsmentioning

confidence: 99%

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

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Dielectric, conductivity, and modulus properties of a metal oxide semiconductor (MOS) capacitor with zinc oxide (ZnO) interlayer produced via radio-frequency magnetron sputtering were investigated using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (*='-i''), dielectric loss factor (tan ), ac conductivity (ac), and complex electric modulus (M*=M'+iM'') were studied in temperature interval of 100-400 K for two frequencies (100 and 500 kHz). While the dielectric constant (') and loss ('') value increase as the temperature rises, their values decrease as the frequency rises. The increase in ' and '' is explained by thermal activation of charge carriers. Also, the ac value increases both frequency and temperature increase. The thermal activation energy was determined from slope of Arrhenius plot.

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Section: Resultsmentioning

confidence: 99%

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

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“…In this case, the structure of dielectric curves obtained will be similar to the capacity and conductivity curves. Many researchers use these expressions when studying dielectric spectroscopy [46][47][48][49].…”

Section: Resultsmentioning

confidence: 99%

The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer

et al. 2023

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In this study, Mn doped complexes were produced and used as an interfacial layer in Au/Mn-complex/n-Si structure. For this, metal complex was prepared and added with its material. For this, a mixed ligand complex was prepared and dopped with manganese. The morphological investigations of these structures was fulfilled by using an Atomic Force Microscope. The analyzes showed that relatively smooth and well ordered surfaces. The fabricated structured were characterized using capacitance-voltage (C-V) and conductance-voltage (G/w-V).

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“…Such features were already observed for a metal-insulator-semiconductor (MIS) structure and were attributed to the presence of characteristic times of recharging of the impurity and surface centers. [14][15][16] It is the recharging processes that lead to the occurrence of the features in the form of peaks in the R(T) curves (Figure 4b). In addition, the effect of the gate voltage U g can be noted.…”

Section: Resultsmentioning

confidence: 99%

Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon‐on‐Insulator‐Based Transistor‐Like Device

Smolyakov

Tarasov

Shanidze

et al. 2021

Physica Status Solidi (a)

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Herein, the AC magnetoresistance (MR) in the silicon‐on‐insulator (SOI)‐based Fe/Si/SiO2/p‐Si structure is presented. The structure is used for fabricating a back‐gate field‐effect pseudo‐metal–oxide–semiconductor field‐effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic‐field‐driven SOI‐based devices and high‐frequency circuits.

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The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements

Cited by 32 publications

References 61 publications

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer

Effect of Magnetic and Electric Fields on the AC Resistance of a Silicon‐on‐Insulator‐Based Transistor‐Like Device

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