Abstract:Herein, the AC magnetoresistance (MR) in the silicon‐on‐insulator (SOI) ‐based Fe/Si/SiO2/p‐Si structure is presented. The structure is used for fabricating a back‐gate field‐effect pseudo‐metal–oxide–semiconductor field‐effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface.… Show more
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