Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Abstract

Dielectric, conductivity, and modulus properties of a metal oxide semiconductor (MOS) capacitor with zinc oxide (ZnO) interlayer produced via radio-frequency magnetron sputtering were investigated using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (*='-i''), dielectric loss factor (tan ), ac conductivity (ac), and complex electric modulus (M*=M'+iM'') were studied in temperature interval of 100-400 K for two frequencies (100 and 500 kHz). While the dielectric constant (') and loss ('') value increase as the temperature rises, their values decrease as the frequency rises. The increase in ' and '' is explained by thermal activation of charge carriers. Also, the ac value increases both frequency and temperature increase. The thermal activation energy was determined from slope of Arrhenius plot.