The Natures of Point Defects in Amorphous Silicon Dioxide

Griscom, David L.

doi:10.1007/978-94-010-0944-7_4

Cited by 48 publications

(54 citation statements)

References 78 publications

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“…The performance of optical and electronic devices, which are based on amorphous or crystalline SiO 2 considerably depends on the presence of excited states as well as intrinsic defects in the atomic SiO 2 network [1]. It is an established fact today that the so-called oxygen-deficient centers (ODC's) directly determine the sensitivity of such optical characteristics as the optical density and the refraction index to UV irradiation of 240-245 nm.…”

Section: Introductionmentioning

confidence: 99%

Photosensitive defects in silica layers implanted with germanium ions

Zatsepin¹,

Fitting²,

Кортов³

et al. 2009

Journal of Non-Crystalline Solids

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a b s t r a c tGe-implanted silica layers have been investigated by high-power pulsed synchrotron-photoluminescence (PL), photoluminescence excitation spectroscopy (PLE), and optically stimulated electron emission (OSEE) with respect to association of excitation and absorption bands to respective emission bands and lifetimes of excited defect states. In this way singlet-singlet (4.35 eV) and triplet-singlet (3.18 eV) radiative transitions from excited states of oxygen-deficient centers (ODC) in Ge-doped silica glass are characterized by their absorption and emission bands as well as their lifetimes. The main channel for non-radiative relaxation of photoexcitation is electron emission by the OSEE effect. The OSEE shows non-radiative transitions of surface E 0 s and bulk E 0 -centers found with concentrations of (2.7-3.4) Â 10 12 cm À2 and (2-4) Â 10 16 cm À3, respectively.

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Section: Introductionmentioning

confidence: 99%

Photosensitive defects in silica layers implanted with germanium ions

Zatsepin¹,

Fitting²,

Кортов³

et al. 2009

Journal of Non-Crystalline Solids

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“…The most important and studied radiation-induced point defects in amorphous silicon dioxide (a-SiO 2 ) are the E' centers [1,2]. Four types of these paramagnetic point defects, E' α , E' β , E' γ and E' δ , have been distinguished in bulk materials on the basis of their electron paramagnetic resonance (EPR) line shapes, phenomenological production and thermal stability [1][2][3].…”

mentioning

confidence: 99%

“…Four types of these paramagnetic point defects, E' α , E' β , E' γ and E' δ , have been distinguished in bulk materials on the basis of their electron paramagnetic resonance (EPR) line shapes, phenomenological production and thermal stability [1][2][3].…”

mentioning

confidence: 99%

“…It is characterized by an almost axially symmetric EPR main line with a zero crossing g value of ∼2.0006, ad by a pair of EPR lines split by ∼42 mT, arising from the hyperfine interaction of the unpaired electron with a 29 Si nucleus (nuclear spin I=1/2, natural abundance 4.7%) [1][2][3]. The most accepted model of the E' γ center consists in a puckered positively charged oxygen vacancy: O≡Si…”

mentioning

confidence: 99%

“…• is an unpaired electron and + is a trapped hole) [1][2][3]. In this model it is supposed that, following ionization of the vacancy, the positively charged Si atom moves backward through the plane of its basal oxygens in a puckered configuration.…”

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confidence: 99%

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Si29Hyperfine Structure of theE′αCenter in Amorphous Silicon Dioxide

Buscarino

Agnello²,

Gelardi³

2006

Phys. Rev. Lett.

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We report a study by electron paramagnetic resonance (EPR) on the E' α point defect in amorphous silicon dioxide (a-SiO 2 ). Our experiments were performed on γ-ray irradiated oxygen-deficient materials and pointed out that the 29 Si hyperfine structure of the E' α consists in a pair of lines split by ~49 mT. On the basis of the experimental results a microscopic model is proposed for the E' α center, consisting in a hole trapped in an oxygen vacancy with the unpaired electron sp 3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO 2 matrix.

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The vulnerable nanoscale dielectric

Stoneham

Gavartin

Ramo

et al. 2007

Physica Status Solidi (a)

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It was the wide‐gap insulating oxide that made silicon the semiconductor of choice, to such a degree that silicon technology has transformed our lives. Its roles of surface passivation and as a lithographic material are essential, but its role as the gate dielectric is especially sophisticated. Even though challenged by newer materials, like HfO2, the silicon dioxide dielectric will be around for some time. We discuss some of the key defect processes in these oxides in materials context. What materials must work alongside silicon? To what extent do silica glasses share properties with the gate dielectric oxide? And are there new phenomena to exploit? To illustrate and partially address some of these issues we present and compare the results of calculations of the properties of oxygen vacancies in SiO2, HfO2 and HfSiO4. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The Natures of Point Defects in Amorphous Silicon Dioxide

Cited by 48 publications

References 78 publications

Photosensitive defects in silica layers implanted with germanium ions

Photosensitive defects in silica layers implanted with germanium ions

Si29Hyperfine Structure of theE′αCenter in Amorphous Silicon Dioxide

The vulnerable nanoscale dielectric

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