Photosensitive defects in silica layers implanted with germanium ions

Abstract

a b s t r a c tGe-implanted silica layers have been investigated by high-power pulsed synchrotron-photoluminescence (PL), photoluminescence excitation spectroscopy (PLE), and optically stimulated electron emission (OSEE) with respect to association of excitation and absorption bands to respective emission bands and lifetimes of excited defect states. In this way singlet-singlet (4.35 eV) and triplet-singlet (3.18 eV) radiative transitions from excited states of oxygen-deficient centers (ODC) in Ge-doped silica glass are characterized by their absorption and emission bands as well as their lifetimes. The main channel for non-radiative relaxation of photoexcitation is electron emission by the OSEE effect. The OSEE shows non-radiative transitions of surface E 0 s and bulk E 0 -centers found with concentrations of (2.7-3.4) Â 10 12 cm À2 and (2-4) Â 10 16 cm À3, respectively.

Photoluminescence of Se-related oxygen deficient center in ion-implanted silica films

“…Complex silica-based functional materials, including structures containing semiconductor quantum dots, are often created by means of ion implantation. Required compatibility with the current technology in the semiconductor industry induces an extensive research on Si-based emitting materials in which photoluminescence (PL) properties of Si-, Ge-, and Sn-implanted SiO 2 layers were studied [2][3][4]. Such ion-beam synthesis is inevitably accompanied by generation of point defects which affect the optical properties of the host matrix.…”

The relation between static disorder and photoluminescence quenching law in glasses: A numerical technique

“…3, [5]). Thus one can see that our treatment allows discrimination of different centers with overlapped emission bands by their quenching character similar to lifetime discrimination in kinetics measurements [12].…”

Time-resolved photoluminescence of implanted SiO2:Si+ films

“…The first explanation of noted bands is as a point defect such as an oxygen vacancy or a relaxed "SiASi" (a-ODC) and "GeAGe" (b-ODC) bonds (see, for example, [13]). Our previous investigation has shown that there could be even more types of oxygen-deficient centers contributing to 2.7-3.2 eV and 4.2-4.5 eV PL [14]. The second approach ascribes them to twofold silicon and germanium atoms respectively [6,15,16].…”