2015
DOI: 10.1016/j.chemphys.2015.05.023
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The nature of paramagnetic defects in tin (IV) oxide

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Cited by 27 publications
(15 citation statements)
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“…After the alkali etchingp rocess, the peak signal of etched sample E3 positioned at g % 1.999 is much strongert han that of the pristine one, whichc an be ascribed to the formation of single-electron trapped oxygen vacancies (V O C). [27,28] Oxygen vacancies at the surfaceo fcatalyst can probably act as trapping centers for electrons and similarr esults were also reported for N-TiO 2 -a nd SnO 2 -based semiconductors, owing to the complexes of oxygen vacancies. [27,28] The results showt hat Bi 2 WO 6 in the NaOH solution is undergoing an etching process and the possible dissolved processi nduced oxygen vacancies on the BiÀO layer as evidenced by the increased intensity of BiÀOb onding in E3 and the EPR signal.…”
Section: Resultssupporting
confidence: 69%
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“…After the alkali etchingp rocess, the peak signal of etched sample E3 positioned at g % 1.999 is much strongert han that of the pristine one, whichc an be ascribed to the formation of single-electron trapped oxygen vacancies (V O C). [27,28] Oxygen vacancies at the surfaceo fcatalyst can probably act as trapping centers for electrons and similarr esults were also reported for N-TiO 2 -a nd SnO 2 -based semiconductors, owing to the complexes of oxygen vacancies. [27,28] The results showt hat Bi 2 WO 6 in the NaOH solution is undergoing an etching process and the possible dissolved processi nduced oxygen vacancies on the BiÀO layer as evidenced by the increased intensity of BiÀOb onding in E3 and the EPR signal.…”
Section: Resultssupporting
confidence: 69%
“…[27,28] Oxygen vacancies at the surfaceo fcatalyst can probably act as trapping centers for electrons and similarr esults were also reported for N-TiO 2 -a nd SnO 2 -based semiconductors, owing to the complexes of oxygen vacancies. [27,28] The results showt hat Bi 2 WO 6 in the NaOH solution is undergoing an etching process and the possible dissolved processi nduced oxygen vacancies on the BiÀO layer as evidenced by the increased intensity of BiÀOb onding in E3 and the EPR signal. Raman spectra were also collected to study the oxygen vacancies effecto nt he surface structure of Bi 2 WO 6Àx ,a nd the results are shown in Figure 5.…”
Section: Resultssupporting
confidence: 69%
“…The increasing concentration of VO − in SnO2, TiO2 and WO3 agrees with the renowned oxygen deficiency of these compounds, e.g., the existence of Magneli phases (TinO2n−1) and numerous WO3-x phases [99]. The stability of oxygen vacancies in MOS with high EM-O can be explained by the relatively high electronegativity of the cations which can trap the loosely bound electrons, and, thus, be reduced to Sn 2+ (and Sn 3+ [100]), Ti 3+ , W 5+ (and W 4+ ), respectively. The formation of oxygen vacancy reduces the coordination number of cations, which is favorable for stronger (more covalent) bonding of electronegative cations with oxygen anions.…”
Section: Donor Sites (Oxygen Vacancies)supporting
confidence: 69%
“…The oxidation states and coordination environments of metal cations, oxygen anions and surface oxygen species can be obtained by standard techniques of materials characterization, e.g., X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR), X-ray absorption spectroscopy (XAS), Mossbauer spectroscopy (if applicable for given cations) [45,100,146]. Fourier-transformed infrared (FTIR) spectroscopy is inevitable for the detection of polar adsorbates that have the functional groups with O-H, N-O, N-H, C-H, C-O, S-O bonds, etc.…”
Section: Conflicts Of Interestmentioning
confidence: 99%
“…Assuming that the oxygen vacancies at the interface between different tin oxide phases can work as paramagnetic trapping centres for electrons [23], we used EPR spectroscopy to look for the signal of paramagnetic oxygen vacancies (OV) in the SnO/SnO 2-δ /SnO 2 samples. This method is known as a sensitive tool for the characterization of the paramagnetic centres on various oxide surfaces [24].…”
Section: Resultsmentioning
confidence: 99%