The nature of ion-implanted contacts to polycrystalline diamond films

Avigal, Y.; Richter, V.; Fizgeer, B.M.; Saguy, C.; Kalish, R.

doi:10.1016/j.diamond.2004.02.004

Cited by 13 publications

(8 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the unimplanted samples, the Raman line in the vicinity of 1332 cm -1 was characteristic of sp 3 bonded diamond. A similar broad peak at 1550 cm -1 has previously been identified following the high dose implantation of diamond with Ar + (2 x 10 16 ions/cm 2 ) [8] and B + (1 x 10 16 ions/cm 2 ) [9]. The presence of DLC in grain boundaries has been a feature of diamond films deposited by PECVD [7].…”

Section: Resultssupporting

confidence: 68%

See 1 more Smart Citation

C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

et al. 2004

View full text Add to dashboard Cite

Diamond films were implanted with C + , Si + or Sn + ions at multiple energies in order to generate a uniform region of implantation-induced disorder. Analysis of the C + implanted surfaces by micro-Raman spectroscopy has shown only minor increase in the proportion of nondiamond or sp 2 -bonded carbon at doses of 5 x 10 13 -5 x 10 15 ions/cm 2 . In comparison, an amorphization of the structure was evident after implantation with either Si + ions at a dose of 5 x 10 15 ions/cm 2 or with Sn + ions at >5 x 10 14 ions/cm 2 . At a given implantation dose, the etch rate of the diamond film in a CF 4 /O 2 plasma increased with the mass of the implanted species in the order of C + , Si + and Sn + . For a given implant species, the etch rate was directly proportional to vacancy concentration as controlled by the dose or the implantation-induced disorder.

show abstract

Section: Resultssupporting

confidence: 68%

“…A further broad Raman band at ~1510 cm -1 in the as-deposited samples has been assigned to the presence of diamond-like carbon. The peak was attributed to the formation of non-diamond carbon as either amorphised [8] or graphitic carbon [9]. For the samples implanted with C + ions at a dose of 5 x 10 13 ions/cm 2 , the spectra in Fig.…”

Section: Resultsmentioning

confidence: 97%

C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

et al. 2004

View full text Add to dashboard Cite

show abstract

“…The definition of graphitic conductive regions in diamond has found several interesting applications, such as ohmic contacts [27][28][29][30], infrared radiation emitters [31], field emitters [32], bolometers in both single-crystal [33] and polycrystalline [34] samples, metallo-dielectric photonic crystals [35] and ionizing radiation detectors for x-ray [36] and MeV ion [37] beams.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

et al. 2012

View full text Add to dashboard Cite

We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (∼MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickness mask allows the accurate modulation of the depth at which the microchannels are formed, from several µm deep up to the very surface of the sample. By means of cross-sectional transmission electron microscopy (TEM), we demonstrate that the technique allows the direct writing of amorphous (and graphitic, upon suitable thermal annealing) microstructures extending within the insulating diamond matrix in the three spatial directions, and in particular, that buried channels embedded in a highly insulating matrix emerge and electrically connect to the sample surface at specific locations. Moreover, by means of electrical characterization at both 2 room temperature and variable temperature, we investigate the conductivity and the charge-transport mechanisms of microchannels obtained by implantation at different ion fluences and after subsequent thermal processes, demonstrating that upon high-temperature annealing, the channels implanted above a critical damage density convert into a stable graphitic phase. These structures have significant impact for different applications, such as compact ionizing radiation detectors, dosimeters, bio-sensors and more generally diamond-based devices with buried three-dimensional all-carbon electrodes.

show abstract

“…A. V. Karabutov et al employed nitrogen implantation followed by thermal annealing to provide surface electrical conductivity to diamond microtips and improve their performance as field emitters [18,19]. Moreover, the possibility of creating effective ohmic contacts on doped or intrinsic diamond by high fluence implantation has been explored in several works [20,21,22,23,24]. Interestingly, while this research topic can be considered mature in terms of fundamental studies and technological applications, the possibility of fabricating buried graphitic channels, i.e.…”

Section: Introductionmentioning

confidence: 99%

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

Olivero

Amato

Bellotti

et al. 2009

Diamond and Related Materials

View full text Add to dashboard Cite

We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages.In the present work we describe the sample masking, which includes the deposition of semi-spherical gold contacts on the sample surface, followed by MeV ion implantation.Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing.

show abstract

The nature of ion-implanted contacts to polycrystalline diamond films

Cited by 13 publications

References 10 publications

C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

Contact Info

Product

Resources

About