C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

Abstract

Diamond films were implanted with C + , Si + or Sn + ions at multiple energies in order to generate a uniform region of implantation-induced disorder. Analysis of the C + implanted surfaces by micro-Raman spectroscopy has shown only minor increase in the proportion of nondiamond or sp 2 -bonded carbon at doses of 5 x 10 13 -5 x 10 15 ions/cm 2 . In comparison, an amorphization of the structure was evident after implantation with either Si + ions at a dose of 5 x 10 15 ions/cm 2 or with Sn + ions at >5 x 10 14 ions/cm 2 . At a given implantation dose, the etch rate of the diamond film in a CF 4 /O 2 plasma increased with the mass of the implanted species in the order of C + , Si + and Sn + . For a given implant species, the etch rate was directly proportional to vacancy concentration as controlled by the dose or the implantation-induced disorder.